Jitsuo Ohta

The University of Tokyo — Japan

Physics and Astronomy · Physical Sciences

28h-index2.8kcitations173works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(157), ZnO doping and properties(88), Ga2O3 and related materials(75), Metal and Thin Film Mechanics(62), Semiconductor materials and devices(27)

Publications173 total

AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature
Scientific Reports·2019· 5 citedOpen Access
Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering
APL Materials·2018· 9 citedOpen Access
Electron transport properties of degenerate <i>n</i>-type GaN prepared by pulsed sputtering
APL Materials·2017· 47 citedOpen Access
Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
Scientific Reports·2017· 10 citedOpen Access
Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering
Applied Physics Express·2017· 38 cited
Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition
physica status solidi (b)·2017· 8 cited
Selective epitaxial growth of doped GaN by pulsed sputtering
The Japan Society of Applied Physics·2017
GaN growth on amorphous substrates with transfer-free graphene buffer layer
The Japan Society of Applied Physics·2017
Thin-film transistors using an InAlN channel layer
The Japan Society of Applied Physics·2017
Fabrication of n-type GaN Schottky diodes by pulsed sputtering
The Japan Society of Applied Physics·2017
Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation
APL Materials·2017· 21 citedOpen Access
Epitaxial growth of semipolar InAlN films on yttria-stabilized zirconia
physica status solidi (b)·2017· 1 cited
Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition
physica status solidi (a)·2017· 3 cited
Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
Scientific Reports·2017· 25 citedOpen Access
Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices
Japanese Journal of Applied Physics·2017· 7 cited
Growth of hBN films on AlN layers with metal catalysts by sputtering
The Japan Society of Applied Physics·2017
Preparation of AlGaN/GaN HEMT structures on amorphous substrates with graphene buffer layers
The Japan Society of Applied Physics·2017
Thin-film transistors based on InGaN grown at room temperature
The Japan Society of Applied Physics·2017
N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering
APL Materials·2017· 19 citedOpen Access
Electrical properties of Si-doped GaN prepared using pulsed sputtering
Applied Physics Letters·2017· 69 citedOpen Access
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Frequent Co-authors

Hiroshi Fujioka(49), Atsushi Kobayashi(25), M. Oshima(18), Kohei Ueno(14), Hiroyuki Takahashi(5), Yuji Kawaguchi(4), Yasuaki Arakawa(4), Masatomo Sumiya(4), Shin‐ichi Ito(3), Masaharu Oshima(3), Akira Ishii(3), Hideomi Koinuma(3), Jeong Woo Shon(2), Satoshi Kawano(2), Shigeru Inoue(2), Koichi Okamoto(2), Sayako Inoué(2), Nobuyuki Matsuki(2), Hidetaka Amanai(2), Satoru Nagao(2)