Hidetaka Amanai

Physics and Astronomy · Physical Sciences

8h-index158citations19works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(7), GaN-based semiconductor devices and materials(5), Photonic and Optical Devices(4), Metal and Thin Film Mechanics(4), Advanced Photonic Communication Systems(4)

Publications19 total

Study of the Relationship Between a Gas-Barrier Property and the Residual Stress of Films Made by a Cat-CVD Method
2012
Room‐temperature epitaxial growth of high‐quality <i>m</i> ‐plane InGaN films on ZnO substrates
physica status solidi (RRL) - Rapid Research Letters·2009· 16 cited
Room temperature growth of semipolar AlN (1$ \bar 1 $02) films on ZnO (1$ \bar 1 $02) substrates by pulsed laser deposition
physica status solidi (RRL) - Rapid Research Letters·2009· 14 cited
Growth and characterization of nonpolar and semipolar (Al,In,Ga) N films on ZnO substrates
IEICE technical report. Speech·2008· 3 cited
Growth of a-plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer
Applied Physics Letters·2007· 23 cited
Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers
Applied Physics Letters·2007· 25 cited
High-Performance of InAlGaAs/InAlAs/InP Multi-Mode Interference Photonic Switch with Partial Index-Modulation Region (MIPS-P)
2006
High-speed optical switching of InAlGaAs/InAlAs multi-mode interference photonic switch with partial index-modulation region(MIPS-P)
IEICE Technical Report; IEICE Tech. Rep.·2006
High-speed optical switching of InAlGaAs/InAlAs multi-mode interference photonic switch with partial index-modulation region (MIPS-P)
2006· 5 cited
High-speed optical switching of InAlGaAs/InAlAs multi-mode interference photonic switch with partial index-modulation region (MIPS-P)
IEICE Electronics Express·2005· 18 citedOpen Access
Phonon bottleneck effects in InAs/GaInP quantum dots
Journal of Luminescence·2004· 8 cited
21pWB-6 Electron-phonon interaction in semiconductor quantum dots
日本物理学会講演概要集·2003
Growth and temperature characteristic of self-assembled InAs-QD on GaInP
International Conference on Molecular Bean Epitaxy·2003
Growth and temperature characteristic of self-assembled InAs-QD on GaInP
Journal of Crystal Growth·2003· 3 cited
24pWE-6 Photoluminescence and dynamics of exciton in ID - V compounds semiconductor quantum dots
Meeting abstracts of the Physical Society of Japan·2002
InAs/GaInP self-assembled quantum dots: molecular beam epitaxial growth and optical properties
Journal of Crystal Growth·2001· 10 cited
^ Dy and ^ Gd Mossbauer Spectroscopy of the RTC_2 Intermetallics (R=Dy, Gd ; T=Ni, Co)
Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy·1997
Noncollinear antiferromagnetic structure and commensurate—incommensurate transition of DyNiC2 studied by magnetization measurement, neutron diffraction and 161Dy Mössbauer spectroscopy
Journal of Magnetism and Magnetic Materials·1995· 21 cited
Magnetic properties of the ternary carbide DyCoC2 studied by magnetization measurements, neutron diffraction and 161 Dy Mössbauer spectroscopy
Journal of Magnetism and Magnetic Materials·1995· 12 cited

Frequent Co-authors

Kohei Ueno(5), Atsushi Kobayashi(5), Jitsuo Ohta(5), Hiroshi Fujioka(5), Satoru Nagao(5), H. Horie(5), S. Kumai(4), Katsuyuki Utaka(4), K. Kurihara(4), Satoshi Nagao(4), H. Sakaki(4), Hideya Onodera(3), Masayoshi Ohashi(3), Satoru Matsuo(3), Yasuo Yamaguchi(3), Koji Shimoyama(3), Junji Yoshino(3), Tomohiro Ishikawa(3), Hiroshi Yamauchi(2), Atsushi Okazaki(2)