Hiroshi Fujioka

Tokyo University of Science — Japan

Physics and Astronomy · Physical Sciences

34h-index4.8kcitations432works2.52yr avg
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Research Topics

GaN-based semiconductor devices and materials(273), ZnO doping and properties(118), Ga2O3 and related materials(107), Metal and Thin Film Mechanics(106), Semiconductor materials and devices(106)

Publications431 total

Degenerate GaN source–drain AlN/Al<i>x</i>Ga1−<i>x</i>N/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm
APL Materials·2025· 4 citedOpen Access
Fundamental Properties of Heavily Ge‐Doped AlGaN Prepared via Pulsed Sputtering
physica status solidi (b)·2025Open Access
Preparation of GaN and AlGaN by pulsed sputtering
2025
Machine-learning potential for phonon transport in AlN with defects in multiple charge states
Physical Review Materials·2025· 3 citedOpen Access
Nitride Semiconductors
physica status solidi (b)·2024· 23 citedOpen Access
Nitride Semiconductors
physica status solidi (RRL) - Rapid Research Letters·2024Open Access
Nitride Semiconductors
physica status solidi (a)·2024Open Access
Machine-learning potential for phonon transport in AlN with defects in multiple charge states
arXiv (Cornell University)·2024Open Access
Mechanism of longitudinal optical phonon resonant terahertz to mid-infrared emission from metallic material – semiconductor grating structures
2024
First-principles study of charge states effects of nitrogen vacancies on phonon properties in III-nitride semiconductors
Computational Materials Science·2024· 4 citedOpen Access
A study on machine learning for creating crack images of RC columns
2024· 1 citedOpen Access
High Thermal Conductivity AlN Films for Advanced 3D Chiplets
2024· 4 cited
Pulsed Sputtering Epitaxy of Coherent AlN/Al<sub>0.5</sub>Ga<sub>0.5</sub>N/AlN Multichannel Structures
physica status solidi (RRL) - Rapid Research Letters·2024· 2 citedOpen Access
Heavy Ge Doping in GaN via Pulsed Sputtering to Tailor the Optical Bandgap Energy
physica status solidi (a)·2024· 4 citedOpen Access
Energization‐Time Dependence of Electrical Properties of Anodized n‐GaN Grown on Si Substrates
physica status solidi (b)·2024Open Access
Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition
physica status solidi (a)·2024· 1 citedOpen Access
Characteristics of group III-nitride films prepared by pulsed sputtering
2024
Longitudinal optical (LO) and LO-like phonon resonant mid-infrared radiation emission and absorption by surface micro-structures on III-nitrides
2024
Temperature‐Dependent Characteristics of AlN/Al<sub>0.5</sub>Ga<sub>0.5</sub>N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts
physica status solidi (a)·2024· 1 citedOpen Access
Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications
Applied Physics Express·2023· 9 citedOpen Access
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Frequent Co-authors

Jitsuo Ohta(33), Atsushi Kobayashi(21), M. Oshima(19), Kohei Ueno(11), Masaharu Oshima(4), Yuji Kawaguchi(4), Takaaki Mano(4), Yasuaki Arakawa(4), Hiroyuki Takahashi(4), Hideomi Koinuma(3), Shiro Tsukamoto(3), Nobuyuki Koguchi(3), Akira Ishii(3), Kanta Ono(3), Jeong Woo Shon(2), Katsuyuki Watanabe(2), Shigeru Inoue(2), Masatomo Sumiya(2), Sayako Inoué(2), Koichi Okamoto(2)