Katsuyuki Watanabe

Government of Japan — Japan

Physics and Astronomy · Physical Sciences

20h-index1.9kcitations137works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(65), Photonic and Optical Devices(57), Semiconductor Lasers and Optical Devices(53), Photonic Crystals and Applications(41), Quantum Dots Synthesis And Properties(19)

Publications137 total

Comparison of the Importance and Prioritization of Information Communicated to Consumers by Experts Regarding Food Safety
Food Safety·2022· 1 citedOpen Access
Fabrication of three-dimensional photonic crystals for near-infrared light by micro-manipulation technique under optical microscope observation
Applied Physics Express·2021· 6 cited
Growth of highly-uniform InAs quantum dots on metamorphic GaInAs/GaAs in 1.5-µm wavelength region
The Japan Society of Applied Physics·2021
Effect of p-doping on threshold current characteristics in InAs/GaAs quantum dot lasers
The Japan Society of Applied Physics·2021
Multispectral imaging of mineral samples by infrared quantum dot focal plane array sensors
Measurement·2020· 5 citedOpen Access
1.06 μm wavelength band InAs and InGaAs QD lasers
The Japan Society of Applied Physics·2020
Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix
physica status solidi (b)·2019· 12 cited
Direct GaAs growth on SOI substrate and its crystal quality evaluation
The Japan Society of Applied Physics·2019
1.6 μm-band Emission from Metamorphic InAs Quantum Dots on GaAs Substrates
The Japan Society of Applied Physics·2019
Fabrication and Characterization of Large-Area Three-Dimensional Photonic Crystals by a Micro-Manipulation Method using an Optical Microscope
The Japan Society of Applied Physics·2019
InAs/GaAs Trilayer Quantum Dots with Long-wavelength Emission
The Japan Society of Applied Physics·2019
Nanocavity Based on a Topological Corner State in a Two-Dimensional Photonic Crystal
Conference on Lasers and Electro-Optics·2019
GaAs valley photonic crystal waveguide with light-emitting InAs quantum dots
Applied Physics Express·2019· 49 citedOpen Access
Single plasmon generation in an InAs/GaAs quantum dot in a transfer-printed plasmonic microring resonator
arXiv (Cornell University)·2019Open Access
Single Plasmon Generation in an InAs/GaAs Quantum Dot in a Transfer-Printed Plasmonic Microring Resonator
ACS Photonics·2019· 20 cited
Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer
Japanese Journal of Applied Physics·2019· 26 cited
High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001)
Optics Express·2019· 61 citedOpen Access
Demonstration of a photonic crystal nanocavity implemented with a topological corner state
The Japan Society of Applied Physics·2019
Growth of InAs/GaAs Bilayer Quantum Dots with Long-wavelength Emission
The Japan Society of Applied Physics·2019
MBE growth of 1.5-µm-band metamorphic InAs/GaInAs/GaAs quantum dots
The Japan Society of Applied Physics·2019
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Frequent Co-authors

Yasuhiko Arakawa(39), Satoshi Iwamoto(25), Yasutomo Ota(15), Katsuaki Tanabe(6), Nobuyuki Koguchi(6), Naoto Kumagai(6), Jinkwan Kwoen(6), Satomi Ishida(4), Takeo Kageyama(4), Takaaki Mano(4), Shiro Tsukamoto(4), Hiroshi Fujioka(3), Masaharu Oshima(3), Masahiro Kakuda(3), Ryota Katsumi(3), Akira Ishizaki(3), Toshihiro Nakaoka(3), Quoc Huy Vo(3), Yoshihiko Gotoh(2), Masahiro Nomura(2)