Kohei Ueno

Kyushu University — Japan

Physics and Astronomy · Physical Sciences

23h-index2.0kcitations242works0.92yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

GaN-based semiconductor devices and materials(124), Metal and Thin Film Mechanics(54), Ga2O3 and related materials(38), Semiconductor materials and devices(36), ZnO doping and properties(35)

Publications224 total

Osteopenia is a Risk Factor for 2-year Postoperative Survival in Patients with Chronic Limb-Threatening Ischemia
Annals of Vascular Surgery·2025
Influence of heart failure on the clinical outcomes of patients with chronic limb-threatening ischemia after infrainguinal revascularization
Journal of Vascular Surgery·2025· 1 citedOpen Access
Degenerate GaN source–drain AlN/Al<i>x</i>Ga1−<i>x</i>N/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm
APL Materials·2025· 4 citedOpen Access
Preparation of GaN and AlGaN by pulsed sputtering
2025
[Hemosuccus pancreaticus caused by a ruptured splenic artery aneurysm in an intraductal papillary mucinous neoplasm].
PubMed·2025
Dynamics of Superattracting Skew Products on the Attracting Basins: Bottcher Coordinates and Plurisubharmonic Functions
International Journal of Dynamical Systems and Differential Equations·2025
Dynamics of superattracting skew products on the attracting basins: Böttcher coordinates and plurisubharmonic functions
International Journal of Dynamical Systems and Differential Equations·2025
Mechanism of longitudinal optical phonon resonant terahertz to mid-infrared emission from metallic material – semiconductor grating structures
2024
Pulsed Sputtering Epitaxy of Coherent AlN/Al<sub>0.5</sub>Ga<sub>0.5</sub>N/AlN Multichannel Structures
physica status solidi (RRL) - Rapid Research Letters·2024· 2 citedOpen Access
Heavy Ge Doping in GaN via Pulsed Sputtering to Tailor the Optical Bandgap Energy
physica status solidi (a)·2024· 4 citedOpen Access
Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition
physica status solidi (a)·2024· 1 citedOpen Access
Characteristics of group III-nitride films prepared by pulsed sputtering
2024
Longitudinal optical (LO) and LO-like phonon resonant mid-infrared radiation emission and absorption by surface micro-structures on III-nitrides
2024
Temperature‐Dependent Characteristics of AlN/Al<sub>0.5</sub>Ga<sub>0.5</sub>N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts
physica status solidi (a)·2024· 1 citedOpen Access
Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications
Applied Physics Express·2023· 9 citedOpen Access
Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering
Applied Physics Express·2023· 18 citedOpen Access
Mid-infrared thermal radiation resonating with longitudinal-optical like phonon from n<sup>++</sup>-doped GaN–semi-insulating GaN grating structure
Journal of Physics D Applied Physics·2023· 5 citedOpen Access
Preparation of degenerate n-type Al<i>x</i>Ga1−<i>x</i>N (0 &amp;lt; <i>x</i> ≤ 0.81) with record low resistivity by pulsed sputtering deposition
Applied Physics Letters·2023· 13 cited
Dynamics of superattracting skew products on the attracting basins: Böttcher coordinates and plurisubharmonic functions
arXiv (Cornell University)·2023Open Access
Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering
Applied Physics Letters·2023· 8 cited
page 1 of 12Next →

Frequent Co-authors

Hiroshi Fujioka(32), Atsushi Kobayashi(28), Jitsuo Ohta(22), K. Komura(8), Masayoshi Yamamoto(6), Yasuaki Arakawa(4), S. Igarashi(4), Hidetaka Amanai(4), Satoru Nagao(4), H. Horie(4), Taiga Fudetani(3), A. Koma(3), Y. Yamauchi(3), A. Tsumura(3), K. Chatani(3), Masaharu Oshima(3), Jeong Woo Shon(2), David Assinder(2), Johkun AKATSU(2), Eiji Kishikawa(2)