Taiga Fudetani

Physics and Astronomy · Physical Sciences

4h-index103citations10works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(7), Metal and Thin Film Mechanics(6), Semiconductor Quantum Structures and Devices(3), Semiconductor materials and devices(2), Advancements in Photolithography Techniques(2)

Publications10 total

Exploring multilayer mirror designs for future EUV lithography
2025
Comparing bright field imaging performance at 0.33 NA of a novel low-reflectivity low-n and a standard Ta-based EUV mask
2025
Proposal of novel EUV phase shift mask
2023
Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes
Applied Physics Letters·2021· 9 cited
Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition
Scientific Reports·2019· 25 citedOpen Access
Characteristics of GaN Tunnel Junction Contacts for LEDs Prepared by Pulsed Sputtering
OPTICS & PHOTONICS International Congress·2019
Characterization of GaN tunnel junction contact grown on LED by sputtering
The Japan Society of Applied Physics·2019
Wide range doping controllability of p-type GaN films prepared via pulsed sputtering
Applied Physics Letters·2019· 22 cited
Characteristics of Mg-doped GaN films prepared by pulsed sputtering
The Japan Society of Applied Physics·2018
Electron transport properties of degenerate <i>n</i>-type GaN prepared by pulsed sputtering
APL Materials·2017· 47 citedOpen Access

Frequent Co-authors

Kohei Ueno(6), Atsushi Kobayashi(6), Hiroshi Fujioka(6), Hiroshi Hanekawa(3), Takeshi Tomizawa(2), Yasuaki Arakawa(1), Jitsuo Ohta(1), Jun Tsunoda(1), Takumi Kato(1), Lieve Van Look(1), Guillaume Libeert(1), Nick Pellens(1), Vicky Philipsen(1), Itaru Yoshida(1), Ryo Koyano(1), Kenjiro Ichikawa(1), Hitoshi Tanaka(1), Yoshiaki Ikuta(1)