E. H. C. Parker

Engineering · Physical Sciences

13h-index406citations40works0.02yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(19), Semiconductor materials and devices(16), Semiconductor Quantum Structures and Devices(12), Semiconductor materials and interfaces(11), Silicon Nanostructures and Photoluminescence(10)

Publications40 total

Si-MBE Growth Systems — Technology and Practice
2018
High performance semiconductor-superconductor junction coolers
2016
Strained Si and Ge Channels
2013
Spin transport in germanium at room temperature
Applied Physics Letters·2010· 47 citedOpen Access
Low temperature effective mobility measurements and modelling of high-k gated Si n-MOS and p-MOS devices
ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)·2010
Anomalous Ge diffusion effects during Ge-condensation
2008
The relative performance enhancement of strained-Si and buried channel p-MOS as a function of lithographic and effective gate lengths
2004· 3 cited
Observation of phonon confinement in SiGe nanocrystals and preferential etching of Si in porous Si1xGex films
physica status solidi (a)·2003· 13 cited
Enhanced performance from SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10μm x 10μm Si Pillars
2002
Si 0.64 Ge 0.36 /Si heterojunction MOSFETS: design and evaluation
2001
SiGe field effect transistors - performance and applications
Journal of Telecommunications and Information Technology·2001Open Access
Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise
2001· 11 cited
Two dimensional phonon-drag thermopower in Si0.87Ge0.13/Si (001) heterostructure grown by MBE
Microelectronic Engineering·2000· 4 cited
SiGe CMOS fabrication using SiGe MBE and anodic/LTO gate oxide
Semiconductor Science and Technology·2000· 3 cited
Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels
Applied Physics Letters·1999· 19 citedOpen Access
Issues on the molecular-beam epitaxial growth of <i>p</i>-SiGe inverted-modulation-doped structures
Applied Physics Letters·1999· 9 citedOpen Access
SiGe heterostructures for FET applications
Journal of Physics D Applied Physics·1999· 2 cited
The elimination of surface cross-hatch from relaxed, limited-area Si1−xGex buffer layers
Applied Physics Letters·1997· 24 citedOpen Access
Structural and optical characterisation of undoped superlattices grown by MBE
Thin Solid Films·1997· 9 cited
Residual strain in Si-Si1−xGex quantum dots
Solid-State Electronics·1996· 3 cited
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Frequent Co-authors

T. E. Whall(25), R. A. A. Kubiak(11), D. R. Leadley(5), P. J. Phillips(5), A G R Evans(5), Adrian R. Powell(4), O. A. Mironov(4), A.M. Waite(4), T E Whall(4), Yan Pennec(3), N. L. Mattey(3), T. J. Grasby(3), G. Braithwaite(3), M. Myronov(3), Vishal Ajit Shah(2), Y. S. Tang(2), H. Presting(2), H. Kibbel(2), R. Hammond(2), Andrew Plews(2)