T. E. Whall

Engineering · Physical Sciences

25h-index2.4kcitations203works0.02yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(101), Semiconductor materials and devices(100), Semiconductor Quantum Structures and Devices(75), Semiconductor materials and interfaces(46), Silicon Nanostructures and Photoluminescence(35)

Publications203 total

Energy filtered TEM analyses of Ge snowploughing during oxidation of SiGe/Si MOSFET device structures
2018· 1 cited
Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers
Journal of Low Temperature Physics·2016· 7 citedOpen Access
High performance semiconductor-superconductor junction coolers
2016
Interfacial Engineering of Semiconductor–Superconductor Junctions for High Performance Micro-Coolers
Scientific Reports·2015· 18 citedOpen Access
Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz
2015
Superconducting platinum silicide for electron cooling in silicon
Solid-State Electronics·2014· 3 citedOpen Access
Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry
Solid-State Electronics·2014· 5 cited
Novel fabrication technique for Ge membranes
2013
Cooltronics: A new low-temperature tunneling-technology based on Silicon
2013
Hole-phonon energy loss rate in boron doped silicon
2013· 4 cited
Using platinum silicide as a superconductor for silicon electron coolers
2013· 1 cited
Localization–delocalization transition for disordered cubic harmonic lattices
Journal of Physics Condensed Matter·2012· 16 citedOpen Access
Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature
IEEE Transactions on Electron Devices·2012· 26 cited
Strain enhanced electron cooling in a degenerately doped semiconductor
Applied Physics Letters·2011· 16 citedOpen Access
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
Journal of Applied Physics·2011· 3 cited
Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
Journal of Applied Physics·2011· 26 citedOpen Access
Low-Frequency Noise Characterization of Strained Germanium pMOSFETs
IEEE Transactions on Electron Devices·2011· 19 cited
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations
IEEE Transactions on Electron Devices·2011· 36 citedOpen Access
On the effective mass of holes in inversion layers
2011· 1 cited
Spin Transport in Ge at Room Temperature
한국자기학회 학술연구발표회 논문개요집·2010
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Frequent Co-authors

E. H. C. Parker(31), R. A. A. Kubiak(11), D. R. Leadley(9), E. H. C. Parker(9), P. J. Phillips(9), M. Myronov(7), C. J. Emeleus(7), O. A. Mironov(6), T. J. Grasby(6), C. P. Parry(6), N. L. Mattey(6), David W. Smith(5), M.J. Kearney(5), R. Hammond(4), S. M. Newstead(4), R.J.P. Lander(4), Yan Pennec(4), R. J. H. Morris(3), E. H. C. Parker(3), Y. S. Tang(3)