J. Chapple-Sokol

Engineering · Physical Sciences

11h-index669citations32works0.02yr avg
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Research Topics

Semiconductor materials and devices(17), Thin-Film Transistor Technologies(13), Silicon and Solar Cell Technologies(7), Copper Interconnects and Reliability(7), Silicon Nanostructures and Photoluminescence(4)

Publications32 total

Multizone Uniformity Control of a CMP Process Utilizing a Pre- and Postmeasurement Strategy
2018· 1 cited
Stress migration in a copper - Aluminum hybrid technology
2014· 1 cited
Etching of copper in deionized water rinse
2008· 8 cited
Using a Barrier Layer to Inhibit Ti/Oxide Reaction to Reduce RC Delay and Improve Electromigration in Al-Cu/Ti/W Interconnect for High Power Analog and Mixed Signal Applications
MRS Proceedings·2008
Multizone Uniformity Control of a CMP Process Utilizing a Pre- and Postmeasurement Strategy
2000
Multizone uniformity control of a chemical mechanical polishing process utilizing a pre- and postmeasurement strategy
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2000· 13 cited
Yield improvement at the contact process through run-to-run control
1999· 4 cited
Hydrogen incorporation in silicon nitride films deposited by remote electron-cyclotron-resonance chemical vapor deposition
Journal of Applied Physics·1995· 34 cited
Polarization Effects of Fluorine on the Relative Permittivity in Polyimides
Macromolecules·1994· 250 cited
Applications of computational fluid dynamics for improved performance in chemical-vapor-deposition reactors
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1994· 4 cited
High Quality Plasma‐Enhanced Chemical Vapor Deposited Silicon Nitride Films
Journal of The Electrochemical Society·1993· 43 cited
Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of Films
Journal of The Electrochemical Society·1992· 62 cited
Characterization of selective chemical vapor deposited tungsten using SiH4 reduction
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1992· 10 cited
ChemInform Abstract: Energy Considerations in the Deposition of High‐Quality Plasma‐ Enhanced CVD Silicon Dioxide.
ChemInform·1992
Microwave properties of free-standing dielectric films
Electronics Letters·1992· 17 cited
Energy Considerations in the Deposition of High‐Quality Plasma‐Enhanced CVD Silicon Dioxide
Journal of The Electrochemical Society·1991· 29 cited
Response to ‘‘Comment on ‘<i>E</i>′ centers and nitrogen-related defects in silicon dioxide films’ ’’
Applied Physics Letters·1991Open Access
Kinetic Modeling of the Chemical Vapor Deposition of Silicon Dioxide from Silane or Disilane and Nitrous Oxide
Journal of The Electrochemical Society·1990· 48 cited
<i>E</i>′ centers and nitrogen-related defects in SiO2 films
Applied Physics Letters·1990· 17 cited
ChemInform Abstract: A Kinetics Study of the Atmospheric Pressure CVD Reaction of Silane and Nitrous Oxide
ChemInform·1990
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Frequent Co-authors

Roy G. Gordon(10), James W. Proscia(6), K. Gustin(6), Carmen J. Giunta(5), J. Batey(5), D. Strickler(5), E. Tierney(4), Chadi El Chemali(4), James Moyne(4), Kareemullah Khan(4), Tarun Parikh(4), S. R. Kurtz(4), Richard J. McCurdy(3), Rock Nadeau(3), John Colt(3), Gareth Hougham(2), David E. Kotecki(2), W. A. Pliskin(2), R. A. Conti(2), J. H. Stathis(2)