W. Shedd

Naval Surface Warfare Center — United States

Engineering · Physical Sciences

11h-index416citations54works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(34), Radiation Effects in Electronics(25), Advancements in Semiconductor Devices and Circuit Design(17), Integrated Circuits and Semiconductor Failure Analysis(15), Silicon and Solar Cell Technologies(7)

Publications54 total

Heavy Ion Testing of Commercial GaN Transistors in the Radio Frequency Spectrum
2015· 6 citedOpen Access
The Impact of Total Ionizing Dose on Unhardened SRAM Cell Margins
IEEE Transactions on Nuclear Science·2008· 41 cited
Xilinx Virtex V Field Programmable Gate Array Dose Rate Upset Investigations
2008· 9 cited
The Impact of Total Ionizing Dose on Unhardened
2008· 2 cited
Dose Rate Upset Investigations on the Xilinx Virtex IV Field Programmable Gate Arrays
2007· 27 cited
Total dose effects on buried oxide breakdown
2002
Mechanism of electron capture and its effect on trapped holes at oxygen-deficient centers in buried oxide
2002
Microscopic structure and generation mechanism of E/sub γ/' centers in buried oxide
2002
Total dose response of Maxim analog multiplexers at two dose rates
2002· 8 cited
Characterization of interface traps in SOI material
2002· 3 cited
Radiation sensitivity reduction in deuterium annealed Si–SiO2 structures
Applied Physics Letters·2002· 4 cited
The effect of network topology on proton trapping in amorphous SiO/sub 2/
IEEE Transactions on Nuclear Science·2001· 6 cited
Theory of H− in SiO2
Journal of Non-Crystalline Solids·2001· 9 cited
Cluster embedding techniques applied to hydrogen-related defects in SiO_2
APS March Meeting Abstracts·2001
Hartree Fock and DFT Study of Models for Amorphous Chalcogenide Alloys
APS·2001
Electronic structure theory and mechanisms of the oxide trapped hole annealing process
IEEE Transactions on Nuclear Science·2000· 34 cited
Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO/sub 2/
IEEE Transactions on Nuclear Science·2000· 2 cited
Three-fold Coordinated Paramagnetic Si Centers in Si-SiO 2 Systems: Atomic Structure, Spin Properties, and Effect on the Interface Reliability
APS March Meeting Abstracts·2000
POINT DEFECTS IN Si-SiO2 SYSTEMS: CURRENT UNDERSTANDING
2000· 8 cited
New fundamental defects in a-SiO/sub 2/
IEEE Transactions on Nuclear Science·1999· 16 cited
page 1 of 3Next →

Frequent Co-authors

R.D. Pugh(16), B. Buchanan(12), Shashi P. Karna(10), D. Neamen(6), Henry A. Kurtz(6), B.K. Singaraju(4), Andrew C. Pineda(3), K. Vanheusden(3), Daniel M. Fleetwood(3), D. C. LaPierre(3), C.P. Brothers(3), R. A. B. Devine(3), R. Dolan(3), Arthur H. Edwards(3), J. R. Cappelli(3), Xiaoyin Yao(2), Nathan D. Hindman(2), Lawrence T. Clark(2), Keith E. Holbert(2), D. R. Alexander(2)