A. B. Kuper

Engineering · Physical Sciences

7h-index682citations28works0.02yr avg
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Research Topics

Semiconductor materials and devices(15), Silicon and Solar Cell Technologies(11), Semiconductor materials and interfaces(10), Advancements in Semiconductor Devices and Circuit Design(9), Silicon Nanostructures and Photoluminescence(5)

Publications28 total

Thin-film indium phosphide photovoltaic device research and development. Final report
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·1984
Improved polycrystalline thin film gallium arsenide MOS solar cells
Photovoltaic Specialists Conference·1980· 1 cited
Indium phosphide films for photovoltaic devices
Photovoltaic Specialists Conference·1980· 1 cited
Poly- vs single-crystal silicon solar cells
Photovoltaic Specialists Conference·1978· 1 cited
Oxidation of silicon-germanium alloys
Journal of Crystal Growth·1972· 49 cited
Water Contamination in Thermal Oxide on Silicon
Journal of The Electrochemical Society·1970· 45 cited
Improved solid state electron-charge-storage device
NASA STI Repository (National Aeronautics and Space Administration)·1970Open Access
Silicon surface passivation for devices Quarterly status report
NASA Technical Reports Server (NASA)·1969Open Access
Combined MOS and radiochemical analysis of impurities in SiO sub 2 on Si.
NASA Technical Reports Server (NASA)·1969
Combined MOS and radiochemical analysis of impurities in SiO2 on Si
Surface Science·1969· 13 cited
Impurities and interface states in the silicon dioxide/silicon system Final report
NASA Technical Reports Server (NASA)·1968· 1 citedOpen Access
Phosphosilicate Glass Passivation Against Sodium Impurity in Thermal Oxide on Silicon
Physics of failure in electronics·1967· 3 cited
SiO2/Si interface states at 77 deg K
NASA Technical Reports Server (NASA)·1967
Positive and Negative Ion Motion in Thermal Oxide on Silicon by Radiochemical and Mos Analysis
Physics of failure in electronics·1966· 2 cited
Impurities and Interface States in the Sio2/si System Semiannual Report
NASA Technical Reports Server (NASA)·1966Open Access
Positive and negative ion motion in thermal oxide on silicon by radiochemical and MOS analysis
IEEE Transactions on Electron Devices·1966· 3 citedOpen Access
Sodium distribution in thermal oxide on silicon by radiochemical and MOS analysis
IEEE Transactions on Electron Devices·1966· 128 cited
Semiconductor Junctions and Devices
Journal of The Electrochemical Society·1966· 5 cited
Applied Physics: <i>Physics of Semiconductors</i> . John L. Moll. McGraw-Hill, New York, 1964. x + 293 pp. Illus. $11.50.
Science·1965· 1 cited
Applied Physics. (Book Reviews: Physics of Semiconductors)
1965
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Frequent Co-authors

E. Yon(4), C. T. Tomizuka(2), Wen H. Ko(2), C. J. Slabinski(2), S. S. C. Chu(2), T. L. Chu(2), W. H. Ko(2), Yih-Fong Tzeng(2), David Lazarus(1), J. R. Manning(1), Harry Letaw(1), Lawrence Slifkin(1), E. Sonder(1), S. Margalit(1), A. Bar‐Lev(1), H. Aharoni(1), A. Neugroschel(1), G. L. Holmberg(1), F. D. Miraldi(1), E. H. Nicollian(1)