Kazuo Tsutsui

Innovative Research (United States) — United States

Engineering · Physical Sciences

30h-index4.0kcitations676works2.02yr avg
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Research Topics

Semiconductor materials and devices(339), Semiconductor materials and interfaces(147), Advancements in Semiconductor Devices and Circuit Design(125), GaN-based semiconductor devices and materials(114), Metal and Thin Film Mechanics(69)

Publications676 total

Area and polarity-dependent switching in AlScN ferroelectric capacitors
Japanese Journal of Applied Physics·2026Open Access
Polarity-dependent asymmetric switching of ferroelectric AlScN thin films
Japanese Journal of Applied Physics·2026Open Access
Investigation of Asymmetric Ferroelectric Switching in AlScN MFM Capacitors
2025
Observation of Three-Dimensional Atomic Arrangements Corresponding to Electrical Activation/Deactivation of as Doped in Si
2025
Evaluation of Preferential Cytokine Adsorption onto Biosensing Surface Modified with Glycopolymer
Biosensors·2025Open Access
Low Voltage Operation of Ferroelectric AlScN Films by Oxygen Profiling
IEEJ Transactions on Electronics Information and Systems·2025
Interface properties of SiC MOS devices with NH<sub>3</sub> plasma nitridation of ultrathin SiO<sub>2</sub> interfacial layer
Japanese Journal of Applied Physics·2025
Fabrication of n-type and p-type WSe<sub>2</sub> field-effect transistors and their low-voltage CMOS inverter operation
Japanese Journal of Applied Physics·2025· 2 cited
Threshold Voltage Shift of P-Ch GaN Misfets with Charge Trapping Insulator
ECS Meeting Abstracts·2024
(Invited) Influence of Target-Sample Distance on Residual Stress for Sputter-Deposited Ferroelectric AlScN
ECS Meeting Abstracts·2024
Improvement of MoS<sub>2</sub> Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid
IEEE Journal of the Electron Devices Society·2024· 2 citedOpen Access
Impact of Underlying Insulators on the Crystallinity and Antisite Defect Formation in PVD-MoS<sub>2</sub> Films
IEEE Journal of the Electron Devices Society·2024· 2 citedOpen Access
Peak Frequency Control of Photon-Photon Resonance GaInAsP Membrane DR Lasers on Si with Rear-Side Spacer Waveguide
2024
Oxygen-Atom Incorporated Ferroelectric AlScN Capacitors for Multi-Level Operation
IEEE Electron Device Letters·2024· 7 citedOpen Access
Ferroelectricity Engineered AlScN Thin Films Prepared by Hydrogen Included Reactive Sputtering for Analog Applications
2024· 1 cited
Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO<sub>2</sub> gate dielectric with H<sub>2</sub>O plasma
Japanese Journal of Applied Physics·2024· 2 cited
High quality PVD-MoS<sub>2</sub> film on plasma-ALD-SiO<sub>2</sub> underlaying material for CFET integration
2024· 4 cited
Reduction of contact resistance to PVD-MoS₂ film using aluminum–scandium alloy (AISc) edge contact
2024· 1 cited
Identification of compressive strain in thin ferroelectric Al<sub>1–<i>x</i> </sub>Sc<sub> <i>x</i> </sub>N films by Raman spectroscopy
Japanese Journal of Applied Physics·2024· 1 citedOpen Access
Reactive sputtering of ferroelectric AlScN films with H<sub>2</sub> gas flow for endurance improvement
Japanese Journal of Applied Physics·2024· 16 citedOpen Access
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Frequent Co-authors

Kuniyuki Kakushima(27), Hiroshi Iwai(20), Hitoshi Wakabayashi(14), Nobuyuki Sugii(12), Takuya Hoshii(8), Parhat Ahmet(8), Akira Nishiyama(6), Kenji Natori(6), Takanori Hattori(6), Takamasa Kawanago(6), Atsushi Ogura(5), Akira Izumi(5), N. S. Sokolov(5), Edward Yi Chang(4), Kentaro Matsuura(4), Yoshinori Kataoka(4), K. Tachi(4), Takeo Hattori(4), Iriya Muneta(4), Tien‐Kan Chung(3)