Kuniyuki Kakushima

Tokyo Institute of Technology — Japan

Engineering · Physical Sciences

31h-index4.0kcitations742works1.82yr avg
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Research Topics

Semiconductor materials and devices(428), Advancements in Semiconductor Devices and Circuit Design(192), Semiconductor materials and interfaces(173), GaN-based semiconductor devices and materials(101), Ferroelectric and Negative Capacitance Devices(93)

Publications742 total

N-type charge-transfer doping to physical-vapor-deposited MoS <sub>2</sub> films using atomic-layer-deposited HfO <sub>2</sub> films
Japanese Journal of Applied Physics·2025Open Access
More on the Conception of Atomic Layer Etching: Seiko’s Master Inventor Using the Principle of Alternated Exposures of Silicon to Halogens and to Heat, Ions, and More
ECS Meeting Abstracts·2025
Towards High Spatial Contactless Temperature Monitoring in GaN Devices Using Thermoreflectance
2025
Crystallinity Improvement for PVD-MoS&lt;sub&gt;2&lt;/sub&gt; Films by Plasma Damage Reduction with Higher Deposition Pressure
2025· 1 cited
N-type Charge Transfer Doping in PVD-MoS&lt;sub&gt;2&lt;/sub&gt; Film with ALD-HfO&lt;sub&gt;2&lt;/sub&gt; Film
2025· 1 cited
Zirconium Disulfide Film Annealed in Hydrogen Sulfide Gas with Less Residues
2025· 1 cited
ALD Polycrystalline Ga-Doped In<sub>2</sub>O<sub>3</sub> (Poly-IGO) Nanosheet Exceeding Intrinsic Mobility of 120 cm<sup>2</sup>/Vs for Process-Friendly BEOL-Compatible FET Application
2025· 1 cited
Investigation of Asymmetric Ferroelectric Switching in AlScN MFM Capacitors
2025
P-Type Doping of PVD-MoS<sub>2</sub> Film with Nitrogen Annealing Accelerated by Hydrogen Incorporation
2025· 2 cited
Magnetism control of thin CoFeB layers by ferroelectric polarization
Applied Physics Express·2025Open Access
Low Voltage Operation of Ferroelectric AlScN Films by Oxygen Profiling
IEEJ Transactions on Electronics Information and Systems·2025
Interface properties of SiC MOS devices with NH<sub>3</sub> plasma nitridation of ultrathin SiO<sub>2</sub> interfacial layer
Japanese Journal of Applied Physics·2025
Fabrication of n-type and p-type WSe<sub>2</sub> field-effect transistors and their low-voltage CMOS inverter operation
Japanese Journal of Applied Physics·2025· 2 cited
Improvement of MoS<sub>2</sub> film quality using sputtering processes controlling particle- and energy-flux followed by sulfur-vapor annealing
Japanese Journal of Applied Physics·2025· 1 citedOpen Access
P-Type Doping of Solid-Phase Crystallized PVD-MoS₂ Film Using Nitrogen Annealing Accelerated by Hydrogen
IEEE Journal of the Electron Devices Society·2025· 1 citedOpen Access
Crystallinity improvement of physical-vapor-deposited WS<sub>2</sub> films by controlling particle energy
Japanese Journal of Applied Physics·2024· 3 citedOpen Access
WS<sub>2</sub>-contact resistance reduction to nickel by Al<sub>2</sub>O<sub>3</sub> insertion
Japanese Journal of Applied Physics·2024Open Access
Threshold Voltage Shift of P-Ch GaN Misfets with Charge Trapping Insulator
ECS Meeting Abstracts·2024
Seiichi Iwamatsu, the Inventor of Atomic Layer Etching: The Conception of Cycled Exposures of Silicon to Halogens and Pulses of Heat, Ions, and More
ECS Meeting Abstracts·2024
(Invited) High Crystallinity of MoS<sub>2 </sub>by Film Annealing in Sulfur Atmosphere and Plasma Control during RF Sputtering
ECS Meeting Abstracts·2024· 1 cited
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Frequent Co-authors

Hiroshi Iwai(35), Kazuo Tsutsui(26), Hitoshi Wakabayashi(13), Nobuyuki Sugii(13), Parhat Ahmet(13), Kenji Natori(10), Hei Wong(9), Takuya Hoshii(8), Takanori Hattori(7), Akira Nishiyama(6), Takamasa Kawanago(6), Atsushi Ogura(5), Hiromichi Ohashi(5), K. Tachi(5), Edward Yi Chang(4), Kenji Ohmori(4), Kentaro Matsuura(4), Akira Nakajima(4), Shin–ichi Nishizawa(4), Iriya Muneta(4)