Akira Nakajima

Tokyo Institute of Technology — Japan

Physics and Astronomy · Physical Sciences

26h-index4.4kcitations357works1.32yr avg
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Research Topics

GaN-based semiconductor devices and materials(60), Silicon Carbide Semiconductor Technologies(45), Semiconductor materials and devices(38), Glaucoma and retinal disorders(21), Ocular Surface and Contact Lens(20)

Publications357 total

Pore structure modulation and surface functionalization boosted adsorption of PFAS on porous carbon: Experimental and theoretical investigations
Journal of Hazardous Materials·2025· 3 cited
Subgroups of the Projective Linear Group Realized by wild Galois Points
arXiv (Cornell University)·2025Open Access
High channel mobility at SiO2/GaN interface with different tilt angle trench sidewalls formed by wet etching treatment
APL Materials·2025Open Access
Epitaxial growth of 4H-SiC layers on 4H-SiC vicinal off-cut substrates for GaN/SiC hybrid devices
Materials Science in Semiconductor Processing·2025· 2 cited
All Ion-Implanted Vertical GaN Planar-Gate MOSFETs Fabricated on 4-Inch Substrates
2025· 1 cited
GaN/SiC-Based Polarization Superjunction Hybrid HEMTs (PSJ-hyHEMTs) on Vicinal Off-Angle SiC
2025
Vertical Conduction of AlGaN‐on‐SiC Diodes with Buffer‐Layer‐Free Heterointerfaces
physica status solidi (a)·2025
Water Desorption-Driven Negative Thermal Expansion Behavior of Synthesized Potassium-Ion-Exchanged Gismondine Zeolite
SSRN Electronic Journal·2025Open Access
Epitaxial Growth of 4h-Sic Layers on 4h-Sic Vicinal Off Angle Substrates for Gan/Sic Hybrid Devices
SSRN Electronic Journal·2025Open Access
(Invited) Improvement of Surface Morphology of Vicinal Off Angled 4H-SiC Epitaxial Wafer for GaN/SiC Hybrid Devices
ECS Meeting Abstracts·2024
P-Channel HFET Utilizing 2D Hole Gas in Si-Face 3C/4H-SiC Heterostructure
IEEE Electron Device Letters·2024· 3 cited
Avalanche Stability Improvement by Boron Implanted GaN JTE Structures with Reduced Trap Density
2024· 1 cited
SiC-based high electron mobility transistor
Applied Physics Letters·2024· 11 cited
Boron-Implanted Termination Structures for Vertical GaN Power Devices with Highly Enhanced Breakdown Voltage
IEEJ Transactions on Electronics Information and Systems·2024
Latest Technology Trends in Power Semiconductor Devices
IEEJ Transactions on Electronics Information and Systems·2024
Study on optimization of hydrogen production and utilization from electric power system
Doryoku, Enerugi Gijutsu Shinpojiumu koen ronbunshu/Doryoku, enerugi gijutsu no saizensen koen ronbunshu·2024
Automatic Identification of Daily Life Activities and Prediction of Falling Accidents Caused by Behavior
Communications in computer and information science·2023
Non-destructive Breakdown in GaN/SiC-based Hybrid HEMT
2022
Wafer-scale Fabrication of Vertical GaN p-n Diodes with Graded JTE Structures Using Multiple-zone Boron Implantation
2022· 4 cited
1.2 kV GaN/SiC-based Hybrid High Electron Mobility Transistor with Non-destructive Breakdown
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 9 cited
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Frequent Co-authors

Hiromichi Ohashi(7), H. Kawai(6), E.M. Sankara Narayanan(6), Juyoung Kim(6), Kuniyuki Kakushima(5), Hiroshi Iwai(5), Yasunobu Sumida(4), Mahesh H. Dhyani(4), Vineet Unni(3), Masayasu Bando(3), Keiko Fujiki(3), Atsushi Kanai(3), Shin–ichi Nishizawa(3), Mitsuaki Shimizu(3), Hajime Okumura(3), Kazuo Tsutsui(3), Hitoshi Wakabayashi(3), Hajime Takizawa(3), Hajime Goto(3), Satoru Yamanaka(3)