Darshana Wickramaratne

United States Naval Research Laboratory — United States

Materials Science · Physical Sciences

27h-index3.7kcitations145works6.82yr avg
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Research Topics

2D Materials and Applications(55), GaN-based semiconductor devices and materials(24), Semiconductor materials and devices(23), Graphene research and applications(22), Ga2O3 and related materials(18)

Publications145 total

Effects of altermagnetic order, strain, and doping in RuO <sub>2</sub>
Journal of Materials Chemistry C·2025· 1 cited
Author response for "Effects of altermagnetic order, strain, and doping in RuO&lt;sub&gt;2&lt;/sub&gt;"
2025
Effects of altermagnetic order, strain and doping in RuO$_2$
arXiv (Cornell University)·2025· 1 citedOpen Access
Modeling carrier trapping at semiconductor/dielectric interfaces based on first-principles calculations of nonradiative capture
Journal of Applied Physics·2025· 1 citedOpen Access
Nonradiative quenching of EPR signals in germanium-doped AlGaN: Evidence for <i>DX</i>-center formation
Applied Physics Letters·2025· 1 cited
Defects in semiconductors
Journal of Applied Physics·2024· 11 citedOpen Access
Nonradiative quenching of EPR signals in germanium-doped AlGaN: evidence for DX-center formation
arXiv (Cornell University)·2024Open Access
Direct evidence for carbon incorporation on the nitrogen site in AlN
Physical Review Materials·2024· 2 citedOpen Access
Assessing the SCAN functional for deep defects and small polarons in wide band gap semiconductors and insulators
Physical review. B./Physical review. B·2024· 10 cited
Direct evidence for carbon incorporation on the nitrogen site in AlN
arXiv (Cornell University)·2024Open Access
First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes
Journal of Applied Physics·2024· 7 citedOpen Access
Dopants and defects in ultra-wide bandgap semiconductors
Current Opinion in Solid State and Materials Science·2024· 46 cited
The deep-acceptor nature of the chalcogen vacancies in 2D transition-metal dichalcogenides
2D Materials·2024· 8 citedOpen Access
Highly Efficient Spin–Orbit Torque Switching in Bi<sub>2</sub>Se<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals Heterostructures
ACS Nano·2023· 7 cited
Protection of Ising spin-orbit coupling in bulk misfit superconductors
Physical review. B./Physical review. B·2023· 13 citedOpen Access
Assessing the SCAN functional for deep defects and small polarons in wide-bandgap semiconductors and insulators
arXiv (Cornell University)·2023Open Access
The deep-acceptor nature of the chalcogen vacancies in 2D transition-metal dichalcogenides
arXiv (Cornell University)·2023Open Access
(Invited) Doping of Aluminum Gallium Oxide Alloys
ECS Meeting Abstracts·2023
Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. <b>113</b>, 192106 (2018)]
Applied Physics Letters·2023· 1 citedOpen Access
Ising superconductivity: A first-principles perspective
Applied Physics Letters·2023· 12 citedOpen Access
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Frequent Co-authors

Roger K. Lake(16), Chris G. Van de Walle(16), John L. Lyons(9), Mahesh R. Neupane(7), Jimmy‐Xuan Shen(7), Audrius Alkauskas(6), Cengiz S. Ozkan(5), Cyrus E. Dreyer(5), Noam Bernstein(4), I. I. Mazin(4), Leigh Weston(3), Yafis Barlas(3), Zafer Mutlu(3), Mark E. Turiansky(3), Joel B. Varley(3), Han Han(3), Ping Huai(3), Matthew R. Rosenberger(3), Berend T. Jonker(3), Nicholas L. Adamski(3)