G. Scilla

IBM Research - Thomas J. Watson Research Center — United States

Engineering · Physical Sciences

29h-index2.7kcitations90works0.02yr avg
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Research Topics

Semiconductor materials and devices(44), Silicon and Solar Cell Technologies(26), Semiconductor materials and interfaces(24), Semiconductor Quantum Structures and Devices(19), Advancements in Semiconductor Devices and Circuit Design(17)

Publications90 total

High performance Si and SiGe-base p-n-p transistors
2003· 17 cited
30 GHz polysilicon-emitter and single-crystal-emitter graded SiGe-base PNP transistors
2002· 11 cited
Sub-30ps ECL circuits using high-f/sub T/ Si and SiGe epitaxial base SEEW transistors
2002· 20 cited
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
2002· 52 cited
Wittmer<i>et al</i>. reply
Physical Review Letters·1993
UHV Preparation and In-Situ Surface Analysis of MNFE/Nife Exchange Structures: Interfacial Impurity Incorporation
MRS Proceedings·1993
Silicide formation and dopant diffusion in silicon
Physical review. B, Condensed matter·1992· 7 cited
Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration
Applied Physics Letters·1992· 16 citedOpen Access
Quantitative oxygen measurements in OMVPE Al x Ga1−x As grown by methyl precursors
Journal of Electronic Materials·1992· 63 cited
Non-self-limiting nature of silicon reduction of WF6 in cold wall systems
Journal of Applied Physics·1992· 12 cited
Diffusion of dopants in tungsten disilicide: effects of diffusion paths
Applied Surface Science·1991· 5 cited
Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures
Applied Physics Letters·1991· 24 cited
Epitaxial Growth of GaAs with  (  C 2 H 5 ) 2GaCl and AsH3 in a Hotwall Reactor
Journal of The Electrochemical Society·1991· 5 cited
Characterization of epitaxial GaAs and Al<i>x</i>Ga1−<i>x</i>As layers doped with oxygen
Applied Physics Letters·1991· 50 cited
Time-of-flight static secondary ion mass spectrometry study of imidization in pyromellitic dianhydride-4,4'-oxydianiline polyimide films
Macromolecules·1991· 4 cited
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1−xP
Journal of Crystal Growth·1991· 38 cited
High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure
Applied Physics Letters·1991· 23 cited
The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process)
Journal of Crystal Growth·1991· 15 cited
Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 − y, TMG and AsH3
Journal of Crystal Growth·1991· 90 cited
The use of azo-compounds as probes of carbon incorporation of nominally undoped metalorganic vapor phase epitaxy grown GaAs
Journal of Applied Physics·1991· 4 cited
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Frequent Co-authors

F. Cardone(14), B.S. Meyerson(10), J.M.C. Stork(10), G.L. Patton(9), D.L. Harame(9), T. F. Kuech(9), R. M. Potemski(8), J.H. Comfort(6), E.F. Crabbé(6), F. M. d’Heurle(6), E. de Frésart(5), Joachim N. Burghartz(5), M. A. Tischler(5), Ο. Thomas(5), J.Y.-C. Sun(4), A. E. Michel(4), G. S. Oehrlein(4), N.I. Buchan(4), C. Stanis(4), E. Ganin(3)