F. M. d’Heurle

Physics and Astronomy · Physical Sciences

53h-index9.6kcitations235works0.02yr avg
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Research Topics

Semiconductor materials and interfaces(171), Intermetallics and Advanced Alloy Properties(72), Silicon and Solar Cell Technologies(63), Semiconductor materials and devices(54), Copper Interconnects and Reliability(48)

Publications235 total

Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films
Microelectronic Engineering·2006· 133 cited
Reactive Diffusion in the Ni-Si System: Influence of Ni Thickness on the Phase Formation Sequence
ECS Meeting Abstracts·2006Open Access
4 Diffusion in silicides
2005· 3 cited
Reactive Diffusion in the Ni-Si System: Phase Sequence and Formation of Metal-Rich Phases
Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum·2005· 29 cited
Stress Development during the Reactive Formation of Silicide Films
Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum·2005· 9 cited
Reactive Phase Formation
Elsevier eBooks·2005· 2 cited
Diffusion in intermetallic compounds: the ordered Cu<sub>3</sub>Au rule, its history
International Journal of Materials Research (formerly Zeitschrift fuer Metallkunde)·2004· 2 cited
Low-temperature formation of CoSi2 in the presence of Au
Journal of Applied Physics·2004· 22 cited
Formation of embedded Co nanoparticles by reaction in Al/Co multilayers and impact on phase sequence
Applied Physics Letters·2004· 4 cited
Towards implementation of a nickel silicide process for CMOS technologies
Microelectronic Engineering·2003· 404 cited
Thermal expansion of the isostructural PtSi and NiSi: Negative expansion coefficient in NiSi and stress effects in thin films
Journal of Applied Physics·2003· 66 cited
Effects of alloying elements on cobalt silicide formation
Journal of Electronic Materials·2002· 50 cited
Role of Silicide Interfaces in Silicon Technology
2002· 1 cited
Formation of C54 TiSi2: Effects of niobium additions on the apparent activation energy
Journal of Applied Physics·2001· 10 cited
In situ resistivity study of copper–cobalt films: precipitation, dissolution and phase transformation
Thin Solid Films·2001· 11 cited
The Epitaxy of CoSi<sub>2</sub> on Si Substrates: A Review
ChemInform·2001
Exploring Thin-Film Reactions by Means of Simultaneous X-Ray Surface Roughness and Resistance Measurements
Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum·2001· 28 cited
On Reactive Diffusion: 1) Kinetics, Growth and Diffusion, 2) Equilibrium?
Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum·2001· 10 cited
High conductivity copper-boron alloys obtained by low temperature annealing
Journal of Electronic Materials·2001· 13 cited
MECHANISMS FOR ENHANCED FORMATION OF THE C54 PHASE OF TITANIUM SILICIDE
2000· 2 cited
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Frequent Co-authors

C. S. Petersson(9), J. E. E. Baglin(9), J. M. E. Harper(6), S. Petersson(6), P. Gaś(4), C. Lavoie(4), C. Cabral(4), Lars Stolt(4), W. Hammer(4), Christophe Detavernier(3), M. Y. Tsai(3), P. M. Fryer(3), G. Scilla(3), A. Charaı̈(3), Ο. Thomas(3), I. Ames(2), S. J. La Placa(2), Jorge de Sousa Pires(2), P.A. Tove(2), R. Mann(2)