M. Y. Tsai

IBM (United States) — United States

Engineering · Physical Sciences

14h-index1.0kcitations18works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(9), Semiconductor materials and interfaces(9), Semiconductor materials and devices(5), Integrated Circuits and Semiconductor Failure Analysis(5), Silicon Nanostructures and Photoluminescence(4)

Publications18 total

Designing the Micro/370
IEEE Design & Test of Computers·1987· 4 cited
Micro/370: a 32-bit single-chip microprocessor
IEEE Journal of Solid-State Circuits·1986· 14 cited
Growth ‘‘kinetics’’ and growth mechanisms for disilicide layers obtained through implantation
Journal of Applied Physics·1982· 21 cited
Comparison of annealing and ion implantation effects during solid state disilicide formation
Journal of Applied Physics·1982· 23 cited
One‐Micron Polycide (WSi2 on Poly‐Si) MOSFET Technology
Journal of The Electrochemical Society·1981· 53 cited
A 34 /spl mu/m/SUP 2/ DRAM cell fabricated with a 1 /spl mu/m single-level polycide FET technology
IEEE Journal of Solid-State Circuits·1981· 6 cited
Properties of tungsten silicide film on polycrystalline silicon
Journal of Applied Physics·1981· 67 cited
A 34 µm<sup>2</sup> DRAM cell fabricated with a 1 µm single-level polycide FET technology
1981
Observations on the hexagonal form of MoSi2 and WSi2 films produced by ion implantation and on related snowplow effects
Journal of Applied Physics·1980· 136 cited
Refractory metal silicide formation induced by As+ implantation
Applied Physics Letters·1980· 65 cited
Shallow junctions by high-dose As implants in Si: experiments and modeling
Journal of Applied Physics·1980· 169 cited
Deep-level-transient spectroscopy: System effects and data analysis
Journal of Applied Physics·1979· 89 cited
Gallium distribution and electrical activation in Ga+-implanted Si
Journal of Electronic Materials·1979· 23 cited
Study of Surface Contamination Produced during High Dose Ion Implantation
Journal of The Electrochemical Society·1979· 19 cited
Laser recrystallization of ion-implanted Si by frequency-doubled Nd:YAG laser
AIP conference proceedings·1979· 5 cited
Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2-implanted silicon
Journal of Applied Physics·1979· 110 cited
Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+
Journal of Applied Physics·1979· 174 cited
Anomalous migration of fluorine and electrical activation of boron in BF+2-implanted silicon
Applied Physics Letters·1978· 59 cited

Frequent Co-authors

B. G. Streetman(6), F. M. d’Heurle(5), C. S. Petersson(5), C. A. Evans(4), A. Cramer(3), M.R. Wordeman(3), H.H. Chao(3), J. E. E. Baglin(2), D.S. Day(2), Peter Williams(2), Suhaidi Hassan(2), F.W. Shih(2), K. Lewis(2), C. Trempel(2), P. McCormick(2), C. Davis(2), A. Diamond(2), T.J. Medve(2), R.H. Dennard(2), F. F. Morehead(1)