P.A. Tove

Uppsala University — Sweden

Physics and Astronomy · Physical Sciences

21h-index1.6kcitations95works0.02yr avg
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Research Topics

Semiconductor materials and interfaces(40), Silicon and Solar Cell Technologies(20), Semiconductor materials and devices(19), Integrated Circuits and Semiconductor Failure Analysis(17), Advanced Semiconductor Detectors and Materials(13)

Publications95 total

A self consistent approach to IV-measurements on rectifying metal-semiconductor contacts
Solid-State Electronics·1989· 36 cited
Determination of the mobility profile in silicon-on-sapphire material using the “fat” FET principle
Solid-State Electronics·1988· 3 cited
Influence of silicon-sapphire interface defects on SOS MESFET behavior
Solid-State Electronics·1988· 2 cited
Complementary Si MESFET concept using silicon-on-sapphire technology
IEEE Electron Device Letters·1988· 19 cited
Silicon IC Technology using Complementary MESFET's
European Solid-State Device Research Conference·1987· 1 cited
Complementary silicon MESFET technology
Electronics Letters·1987· 6 cited
Formation and characterization of metal-semiconductor junctions
Vacuum·1986· 1 cited
Flying-spot scanning for the separate mapping of resistivity and minority-carrier lifetime in silicon
Solid-State Electronics·1986· 9 cited
Computer modeling and comparison of different rectifier (M-S, M-S-M, p-n-n<sup>+</sup>) diodes
IEEE Transactions on Electron Devices·1986· 9 cited
A p-channel MESFET on silicon using an erbium gate
Solid-State Electronics·1985· 6 cited
Calculation of charge distributions and minority-carrier injection ratio for high-barrier schottky diodes
Solid-State Electronics·1985· 26 cited
A self-consistent approach to Fowler plots
Solid-State Electronics·1984· 4 cited
Review of semiconductor detectors for nuclear radiation
Sensors and Actuators·1984· 19 cited
Nonlinear Tunneling Barriers at High Frequencies and their Possible Logic Processing Function in Biological Membrane
1984· 1 cited
Modelling of Semiconductor Structures.
1984
Simple dipole model for barrier heights of silicide-silicon and metal-silicon barriers
Surface Science·1983· 15 cited
Computer modelling of high barrier schottky diodes applied to study of the accuracy of experimental barrier determination
Surface Science·1983· 6 cited
Schottky rectifiers on silicon using high barriers
Solid-State Electronics·1983· 16 cited
COMPUTER MODELLING OF HIGH BARRIER SCHOTTKY DIODES APPLIED TO STUDY OF THE ACCURACY OF EXPERIMENTAL BARRIER DETERMINATION
Elsevier eBooks·1983
A new approach to the determination of MS-barrier heights from photoelectric data and/or an alternative way to determine the value of the Richardson constant
Solid-State Electronics·1982· 7 cited
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Frequent Co-authors

H. Norde(12), S. Petersson(11), Jorge de Sousa Pires(7), F. M. d’Heurle(5), Lars Stolt(5), K Bohlin(3), Ferenc Masszi(3), W. Seibt(2), Karl‐Ragnar Sundström(2), K. Falk(2), D. Donoval(2), M. Słapa(2), Jan Czekajewski(2), Lisa Andersson(2), E. N. Mgbenu(2), Francesco Pesavento(1), J. E. E. Baglin(1), W. Hammer(1), T. S. Kuan(1), Iwao Ohdomari(1)