Jong Han Jeong

Engineering · Physical Sciences

14h-index2.9kcitations22works0.02yr avg
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Research Topics

Thin-Film Transistor Technologies(18), ZnO doping and properties(11), Silicon Nanostructures and Photoluminescence(6), Transition Metal Oxide Nanomaterials(4), Silicon and Solar Cell Technologies(3)

Publications22 total

Noncovalent Functionalization of Single-walled Carbon Nanotubes Using Alkylated Zinc-phthalocyanine for the β-phase Formation of a Polyvinylidene Fluoride Matrix
Polymer Korea·2020· 2 cited
Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors
Journal of Physics D Applied Physics·2012· 80 cited
49.3: Oxide TFT Scan Driver with Dynamic Threshold Voltage Control
SID Symposium Digest of Technical Papers·2011· 14 cited
Amorphous‐oxide TFT backplane for large‐sized AMOLED TVs
Journal of the Society for Information Display·2011· 150 cited
Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics
IEEE Electron Device Letters·2010· 181 cited
69.3: Amorphous Oxide TFT Backplane for Large Size AMOLED TVs
SID Symposium Digest of Technical Papers·2010· 67 cited
The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors
Journal of The Electrochemical Society·2010· 61 cited
Local structure and conduction mechanism in amorphous In–Ga–Zn–O films
Applied Physics Letters·2009· 68 cited
Electronic structure of amorphous InGaO3(ZnO)0.5 thin films
Thin Solid Films·2009· 29 cited
12.1‐in. WXGA AMOLED display driven by InGaZnO thin‐film transistors
Information Display·2009· 1 citedOpen Access
12.1‐in. WXGA AMOLED display driven by InGaZnO thin‐film transistors
Journal of the Society for Information Display·2009· 77 cited
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
Applied Physics Letters·2008· 827 cited
3.1: <i>Distinguished Paper</i> : 12.1‐Inch WXGA AMOLED Display Driven by Indium‐Gallium‐Zinc Oxide TFTs Array
SID Symposium Digest of Technical Papers·2008· 186 cited
Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors
Electrochemical and Solid-State Letters·2008· 235 cited
Bulk-Limited Current Conduction in Amorphous InGaZnO Thin Films
Electrochemical and Solid-State Letters·2008· 52 cited
Optimization of a-IGZO thin-film transistors for OLED applications
2008
High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
Applied Physics Letters·2007· 393 cited
High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
Applied Physics Letters·2007· 455 cited
10.3: 4.0 Inch Organic Thin Film Transistor (OTFT) Based Active Matrix Organic Light Emitting Diode (AMOLED) Display
SID Symposium Digest of Technical Papers·2006· 5 cited
펄스반복율의 가변에 의한 대기압 아크방전중의 고효율 금속산화물 제거 특성
2003
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Frequent Co-authors

Jae Kyeong Jeong(14), Yeon‐Gon Mo(12), Hye Dong Kim(11), Jin‐Seong Park(9), Hui Yang(6), Tae Kyung Ahn(5), Hyun‐Joong Chung(5), Min Kyu Kim(4), Kwang Suk Kim(4), Sangyoon Lee(4), Hun Jung Lee(3), Cheol Seong Hwang(3), Ho Kyoon Chung(3), Yeon Gon Mo(3), Sang Soo Kim(3), Jaewon Song(2), Sung Ho Kim(2), Bon Seog Gu(2), Kwang Hwan Ji(2), Minkyu Kim(2)