Kwang Hwan Ji

LG (South Korea) — South Korea

Engineering · Physical Sciences

11h-index958citations16works0.02yr avg
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Research Topics

Thin-Film Transistor Technologies(16), ZnO doping and properties(10), Silicon and Solar Cell Technologies(6), Semiconductor materials and devices(4), Transition Metal Oxide Nanomaterials(4)

Publications16 total

Trench-Structured High-Current-Driving Aluminum-Doped Indium–Tin–Zinc Oxide Semiconductor Thin-Film Transistor
IEEE Electron Device Letters·2022· 9 cited
P‐2: Novel High Mobility Oxide TFT with Self‐Aligned S/D Regions Formed by Wet‐etch process
SID Symposium Digest of Technical Papers·2016· 14 cited
Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies
Applied Physics Letters·2013· 28 cited
Improvement in the Photo-Induced Bias Instability of Oxide TFT by Controlling Sub-Gap States
ECS Meeting Abstracts·2012
Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C
Applied Physics Letters·2012· 59 cited
Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface
Applied Physics Letters·2011· 80 cited
Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment
Applied Physics Letters·2011· 96 cited
The effect of SiO<inf>2</inf>/SiN<inf>x</inf> bilayer structure on the bias and light-induced instability in InGaZnO TFTs
2011· 1 cited
Ti-Doped Indium Tin Oxide Thin Films for Transparent Field-Effect Transistors: Control of Charge-Carrier Density and Crystalline Structure
ACS Applied Materials & Interfaces·2011· 31 cited
P‐33: Impact of TiO <sub>2</sub> Incorporation in the Structural and Electrical Property of the Sputtered Indium Tin Oxide Field Effect Transistors
SID Symposium Digest of Technical Papers·2011· 1 cited
Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress
Microelectronic Engineering·2011· 42 cited
Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
Applied Physics Letters·2011· 293 cited
Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics
IEEE Electron Device Letters·2010· 181 cited
The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors
Journal of The Electrochemical Society·2010· 61 cited
The Impact of Device Configuration on the Photon-Enhanced Negative Bias Thermal Instability of GaInZnO Thin Film Transistors
Electrochemical and Solid-State Letters·2010· 60 cited
A 2K×2K High Resistivity CCD
Astrophysics and space science library·2000· 2 cited

Frequent Co-authors

Jae Kyeong Jeong(13), Rino Choi(7), Hong Yoon Jung(6), Se Yeob Park(6), Ji-In Kim(5), Sangyoon Lee(5), H.S. Kim(4), Chi‐Sun Hwang(3), Sang‐Hee Ko Park(3), Hoichang Yang(3), Joon Seok Park(3), Tae Sang Kim(3), Myung Kwan Ryu(3), Un Ki Kim(2), Cheol Seong Hwang(2), Yeon‐Gon Mo(2), Jong Han Jeong(2), Shinhyuk Yang(2), Mi Jang(2), Jong Uk Bae(2)