T. González

Universidad de Salamanca — Spain

Physics and Astronomy · Physical Sciences

30h-index3.8kcitations421works1.12yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(223), Advancements in Semiconductor Devices and Circuit Design(175), Semiconductor materials and devices(120), GaN-based semiconductor devices and materials(84), Quantum and electron transport phenomena(73)

Publications421 total

Physical analysis of barrier-inhomogeneity effects on the electrical parameters of GaN Schottky barrier diodes
Journal of Physics D Applied Physics·2025Open Access
Vector-valued self-normalized concentration inequalities beyond sub-Gaussianity
arXiv (Cornell University)·2025Open Access
Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs
Journal of Computational Electronics·2025Open Access
Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight
Journal of Applied Physics·2025· 1 citedOpen Access
Photoresponse of asymmetric planar GaN-based nanodiodes at low temperature
Nanotechnology·2025· 1 citedOpen Access
Enhancement of mmW Detection Using Dual-Terminal Excitation in Transistors
2025Open Access
Foreign body as an infrequent cause of hepatic abscess. A case report
Endoscopy·2025
Successful Endoscopic Closure of Iatrogenic Esophageal Perforation During ERCP
Endoscopy·2025
Endoscopic removal of IUD migrated to the rectum. A simple solution for a rare complication
Endoscopy·2025
Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature
IEEE Transactions on Electron Devices·2025Open Access
Escenarios energéticos de transición para Colombia
2024Open Access
Zero-shot Video Change Detection for Real-life Industrial Applications
Annual Conference of the PHM Society·2024Open Access
On the Effect of Low-Energy Electron Irradiation in the RF Responsivity of GaN Nanodiodes
IEEE Transactions on Electron Devices·2024
Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact
Journal of Physics D Applied Physics·2024· 1 citedOpen Access
GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
2024· 2 citedOpen Access
Analysis of mm-Wave Detection with AlGaN/GaN HEMTs by means of Measurements and Physical and Equivalent Circuit Models
2024Open Access
Equivalent Circuit Model of RF Power Detection with AlGaN/GaN HEMTs up to 67 GHz
SPIRE - Sciences Po Institutional REpository·2024Open Access
Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects
IEEE Transactions on Electron Devices·2024· 3 citedOpen Access
Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature
IEEE Transactions on Electron Devices·2024· 1 citedOpen Access
Effect of the Temperature on the Performance and Dynamic Behavior of HfO<sub>2</sub>-Based Rram Devices
ECS Meeting Abstracts·2024
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Frequent Co-authors

J. Mateos(36), D. Pardo(26), L. Reggiani(11), A. Cappy(10), I. Íñiguez-de-la-Torre(10), B. G. Vasallo(9), S. Pérez(8), L. Varani(6), Daniel Pardo(6), L. Varani(5), S. Bollaert(4), Christophe Gaquière(4), O. M. Bulashenko(4), P. Shiktorov(4), E. Starikov(4), J. C. Vaissière(4), W. Knap(3), Y. Roelens(3), Aimin Song(3), Virginie Hoel(3)