I. Íñiguez-de-la-Torre

Universidad de Salamanca — Spain

Physics and Astronomy · Physical Sciences

16h-index1.1kcitations147works1.52yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor Quantum Structures and Devices(88), GaN-based semiconductor devices and materials(65), Superconducting and THz Device Technology(37), Terahertz technology and applications(31), Advancements in Semiconductor Devices and Circuit Design(29)

Publications147 total

Physical Insight Into Frequency-Dependent Nonlinearities in AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices·2026Open Access
Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight
Journal of Applied Physics·2025· 1 citedOpen Access
Photoresponse of asymmetric planar GaN-based nanodiodes at low temperature
Nanotechnology·2025· 1 citedOpen Access
Enhancement of mmW Detection Using Dual-Terminal Excitation in Transistors
2025Open Access
On the Effect of Low-Energy Electron Irradiation in the RF Responsivity of GaN Nanodiodes
IEEE Transactions on Electron Devices·2024
Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact
Journal of Physics D Applied Physics·2024· 1 citedOpen Access
Analysis of mm-Wave Detection with AlGaN/GaN HEMTs by means of Measurements and Physical and Equivalent Circuit Models
2024Open Access
Equivalent Circuit Model of RF Power Detection with AlGaN/GaN HEMTs up to 67 GHz
SPIRE - Sciences Po Institutional REpository·2024Open Access
Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects
IEEE Transactions on Electron Devices·2024· 3 citedOpen Access
Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature
IEEE Transactions on Electron Devices·2024· 1 citedOpen Access
Effect of the Temperature on the Performance and Dynamic Behavior of HfO<sub>2</sub>-Based Rram Devices
ECS Meeting Abstracts·2024
Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs
IEEE Transactions on Electron Devices·2024Open Access
On the Asymmetry of Resistive Switching Transitions
Electronics·2024· 2 citedOpen Access
Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations
IEEE Transactions on Electron Devices·2024· 1 citedOpen Access
Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
IEEE Transactions on Electron Devices·2024· 6 citedOpen Access
Caractérisation et modélisation de HEMTs AlGaN/GaN utilisés comme détecteurs mmW et sub-THz
SPIRE - Sciences Po Institutional REpository·2024
Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements
IEEE Transactions on Microwave Theory and Techniques·2024· 2 citedOpen Access
Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime
IEEE Transactions on Microwave Theory and Techniques·2024· 1 citedOpen Access
Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes
2024· 2 cited
Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion
Journal of Applied Physics·2024Open Access
page 1 of 8Next →

Frequent Co-authors

J. Mateos(45), T. González(43), Christophe Gaquière(16), S. Pérez(12), Sergio García-Sánchez(10), H. Sánchez-Martín(10), D. Pardo(9), Guillaume Ducournau(6), J.‐F. Millithaler(6), Martin Margala(6), Gaudencio Paz-Martínez(6), P. Sangaré(5), G. Ducournau(5), Aimin Song(5), Paul Sangaré(4), A. Íñiguez-de-la-Torre(4), Yannick Roelens(4), Vikas Kaushal(4), K. Radhakrishnan(4), B. G. Vasallo(4)