Yannick Roelens

Centre National de la Recherche Scientifique — France

Physics and Astronomy · Physical Sciences

13h-index703citations102works2.32yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(60), Advancements in Semiconductor Devices and Circuit Design(30), Semiconductor materials and devices(23), GaN-based semiconductor devices and materials(18), Radio Frequency Integrated Circuit Design(18)

Publications102 total

19 mW/μm<sup>2</sup> and 24.5 % PAE at 94 GHz for 0.30-μm Transferred InP/GaAsSb DHBT on Si-HR
2025
Thermal enhancement of GaN Schottky Diodes Annealed at 600 °C for High Power and High Temperature RF Applications
2025Open Access
Thermal Enhancement of GaN Schottky Diodes Annealed at 600°C for High Power and High Temperature RF Applications
Electronics Letters·2025Open Access
Integration of InP Based Double Heterojunction Bipolar Transistor on Silicon Interposer and Associated RF Characterization
2024· 1 cited
GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
2024· 2 citedOpen Access
Characterization of Schottky Diodes at Wafer Level for Frequency Multipliers Applications Based on RF Coplanar Measurements
2024
Enhanced RF Switch Performance in RFSOI Technology: Achieving 74 fs R<sub>ON</sub>·C<sub>OFF</sub> and 3.3 V RFV<sub>MAX</sub> on Thinned SOI
2024· 1 cited
Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
IEEE Transactions on Electron Devices·2024· 6 citedOpen Access
Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
Journal of Applied Physics·2024· 11 citedOpen Access
Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices
Solid-State Electronics·2023· 1 cited
RF Performances and De-Embedding Techniques of Passive Devices in 3D Homogeneous Integration at Sub-THz
2023· 4 cited
Power Handling of GaN Schottky Diodes on Semi-Insulating Ammonothermal GaN Substrate at 94 GHz
SPIRE - Sciences Po Institutional REpository·2023Open Access
High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers
Journal of Electronic Materials·2023· 11 citedOpen Access
Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
Journal of Applied Physics·2022· 10 citedOpen Access
Development Status of Millimeter Wave GaN Schottky Doublers above W-band for the Implementation of European Terahertz Sources for Astronomy and Astrophysics
HAL (Le Centre pour la Communication Scientifique Directe)·2022Open Access
High Breakdown Voltage Gan Schottky Diodes for Thz Frequency Multipliers
SSRN Electronic Journal·2022Open Access
GaN Schottky diode on sapphire substrate for THz frequency multiplier applications
Micro and Nanostructures·2021· 3 citedOpen Access
GaAs Schottky Diodes Development for Millimeter Wave Doubler
HAL (Le Centre pour la Communication Scientifique Directe)·2021Open Access
GaN schottky diode on silicon substrate for high power THz multiplier
HAL (Le Centre pour la Communication Scientifique Directe)·2021Open Access
GaN Schottky Diode for High Power THz Generation using Multiplier Principle
HAL (Le Centre pour la Communication Scientifique Directe)·2019· 3 citedOpen Access
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Frequent Co-authors

S. Bollaert(27), J. Mateos(19), A. Cappy(18), T. González(17), X. Wallart(12), M. Zaknoune(12), Nicolas Wichmann(10), L. Desplanque(10), I. Íñiguez-de-la-Torre(9), D. Pardo(8), C. Gardès(8), B. G. Vasallo(8), F. Danneville(8), G. Dambrine(8), Jan Grahn(6), J.S. Galloo(5), A. Olivier(5), W. Knap(4), A. Shchepetov(4), A. Noudeviwa(4)