Nicolas Wichmann

Centre National de la Recherche Scientifique — France

Engineering · Physical Sciences

9h-index340citations79works0.02yr avg
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Research Topics

Semiconductor materials and devices(47), Semiconductor Quantum Structures and Devices(42), Advancements in Semiconductor Devices and Circuit Design(42), Radio Frequency Integrated Circuit Design(23), Semiconductor Lasers and Optical Devices(9)

Publications79 total

A 250 MHz to 1.1 THz sub-mm wave on-wafer characterization of InP HEMT using a multiline Thru-Reflect-Line calibration kit
International Journal of Microwave and Wireless Technologies·2025
Development of an Extended-Band mTRL Calibration Kit for On-Wafer Characterization of InP-HEMTs up to 1.1 THz
Electronics·2025Open Access
Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
Journal of Applied Physics·2022· 10 citedOpen Access
A multiline InP-TRL kit for sub-mmWave characterization of InP-HEMT
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)·2022· 3 cited
Kit d'étalonnage TRL pour la caractérisation sub-mmWave sous pointes de InP-HEMT
HAL (Le Centre pour la Communication Scientifique Directe)·2022
f<sub>max</sub>=800 GHz with 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT
2019Open Access
1.2 THz maximum frequency of oscillation achieved by using 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT
2019· 1 cited
Investigation of the UTB-InAs-MOSFETs structure
Materials Science in Semiconductor Processing·2019· 3 citedOpen Access
Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process
Journal of Applied Physics·2018· 8 cited
Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy
Nanotechnology·2018· 5 cited
III-V MOSFET Structure (InP/InAs/InGaAs) I-V Characteristics Using Silvaco TCAD Simulator
Lecture notes in electrical engineering·2018· 2 cited
[Invited] Selective area growth of III-V semiconductors using atomic hydrogen during Molecular Beam epiptaxy
SPIRE - Sciences Po Institutional REpository·2018
Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis
Journal of Applied Physics·2018· 2 citedOpen Access
Ultra thin body InAs MOSFET with raised InAs n<sup>+</sup> S/D by selective MBE
2017· 1 cited
Monte Carlo analysis of III–V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs
2017· 2 cited
縮小ゲート長を有する自己整合In0.53Ga0.47As MOSFETのアナログ/RF研究
Journal of Electronic Materials·2017
Improvement of interfacial properties of Al2O3/GaSb using O2 plasma postoxidation process
HAL (Le Centre pour la Communication Scientifique Directe)·2016
Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
Journal of Electronic Materials·2016· 6 cited
High-performance self-aligned InAs MOSFETs with L-shaped Ni-epilayer alloyed source/drain contact for future low-power RF applications
2016· 2 cited
Improvement of interfacial properties of Al<sub>2</sub>O<sub>3</sub>/GaSb using O<sub>2</sub> plasma postoxidation process
2016· 1 cited
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Frequent Co-authors

S. Bollaert(39), X. Wallart(23), L. Desplanque(14), A. Cappy(13), Yannick Roelens(12), F. Danneville(11), B. G. Vasallo(9), A. Olivier(9), Y. Roelens(8), T. González(8), J. Mateos(8), G. Dambrine(7), Y. Lechaux(6), M. Pastorek(6), A. Noudeviwa(6), I. Duszynski(5), Sylvain Bollaert(4), Hassan Maher(4), Daniel Pardo(3), N. Waldhoff(3)