David Howard

Physics and Astronomy · Physical Sciences

16h-index1.0kcitations73works2.62yr avg
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Research Topics

Semiconductor materials and interfaces(20), Silicon and Solar Cell Technologies(18), Semiconductor materials and devices(15), Radio Frequency Integrated Circuit Design(14), Advancements in Semiconductor Devices and Circuit Design(9)

Publications73 total

A Comprehensive Experimental Characterization of Mechanical Layer Jamming Systems
arXiv (Cornell University)·2025Open Access
A Low-Loss, Wideband, 0-110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
2025
A Tale of Two Phases: An Overview of Phase-Change Material RF Switch Technology: Sub-20-fs R<sub>ON</sub>*C<sub>OFF</sub> RF Switch Technology for the Mm-Wave and 5G/6G Revolutions
IEEE Microwave Magazine·2024· 12 cited
A Novel Wideband RF Turbo Switch Using Phase-Change-Material in a SiGe BiCMOS Process
2024· 1 cited
65nm ROIC platform for next-generation infrared commercial and defense applications
2024
Phase-Change Material RF Switches and Monolithic Integration in 180 nm RF-SOI CMOS Processes
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 10 cited
Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications
2021· 16 cited
Multi-Throw SPNT Circuits Using Phase-Change Material RF Switches for 5G and Millimeter Wave Applications
2021· 13 cited
Switch Stacking for OFF-State Power Handling Improvements in PCM RF Switches
2021· 9 cited
Wideband SPDT and SP4T RF Switches using Phase-Change Material in a SiGe BiCMOS Process
2021· 14 cited
A 25 THz $F_{CO}$ (6.3 fs $R_{ON}*C_{OFF}$) Phase-Change Material RF Switch Fabricated in a High Volume Manufacturing Environment with Demonstrated Cycling &gt; 1 Billion Times
2020· 35 cited
Monolithic Integration of Phase-Change RF Switches in a Production SiGe BiCMOS Process with RF Circuit Demonstrations
2020· 16 cited
A Subthreshold ARM Cortex-M0+ Subsystem in 65 nm CMOS for WSN Applications with 14 Power Domains, 10T SRAM, and Integrated Voltage Regulator
IEEE Journal of Solid-State Circuits·2015· 86 cited
8.1 An 80nW retention 11.7pJ/cycle active subthreshold ARM Cortex-M0&amp;#x002B; subsystem in 65nm CMOS for WSN applications
2015· 74 cited
Recent developments using TowerJazz SiGe BiCMOS platform for mmWave and THz applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2013· 9 cited
Commercially developed mixed-signal CMOS process features for application in advanced ROICs in 0.18&amp;amp;mu;m technology node
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2012
A study of advanced millimeter-wave components monolithically integrated in silicon
2011
270GHz SiGe BiCMOS manufacturing process platform for mmWave applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2011· 1 cited
A millimeter-wave capable SiGe BiCMOS process with 270GHz FMAX HBTs designed for high volume manufacturing
2011· 29 cited
Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2010· 6 cited
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Frequent Co-authors

M. Racanelli(13), David C. Paine(9), Nabil El-Hinnawy(7), A. Kar-Roy(6), Ingrid De Wolf(6), Karen Maex(6), N. G. Stoffel(5), Edward Preisler(5), V. Blaschke(4), Gregory Slovin(4), Jefferson Rose(4), S. Chaudhry(4), Chris Masse(4), Kaijian Shi(3), Jie Zheng(3), F.M. Rotella(3), A. Lauwers(3), H.E. Maes(3), H.E. Maes(3), Greg Slovin(3)