I. K. Han

Seoul National University — South Korea

Physics and Astronomy · Physical Sciences

8h-index201citations91works4.52yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(55), Semiconductor Lasers and Optical Devices(29), Advanced Semiconductor Detectors and Materials(22), Quantum Dots Synthesis And Properties(19), Photonic and Optical Devices(16)

Publications91 total

Machine learning-based prediction of the impact of random grain boundary Z-interference on Vt distribution in 3-D NAND flash memory
Journal of Computational Electronics·2025Open Access
Machine Learning-Based Prediction of Threshold Voltage Distribution Due to Lateral Migration in 3-D NAND Flash Memory
IEEE Transactions on Electron Devices·2024· 9 cited
Hole Mobility Characteristics with Surface Roughness on Silicon-on-Insulator Substrate
Journal of Nanoscience and Nanotechnology·2018· 4 cited
GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications
Nanotechnology·2018· 10 citedOpen Access
The Evaluation of Hole Mobility Characteristics with Surface Roughness
Journal of Nanoscience and Nanotechnology·2017· 2 cited
Highly efficient circular holes added a-Si:H grating coupler with metal mirror for 3D optical interconnects
2016
Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling
nano Online·2016Open Access
Influence of growth Temperature on the Formation of 10 monolayer-thick InGaAs Quantum dots formed with 5 repetitions of 1 monolayer-thick InAs and 1 monolayer-thick GaAs
Applied Science and Convergence Technology·2015· 1 cited
Growth of InP, InGaAs 55um-long nanowires
한국진공학회 학술발표회초록집·2014
Controlled growth of InAs nanowires
한국진공학회 학술발표회초록집·2014
Optical anisotropy in InP string-like aligned quantum dots
Journal of the Korean Physical Society·2014· 1 cited
Effects of Growth and Annealing Temperatures on the Structural and the Optical Properties of In<SUB>0.6</SUB>Al<SUB>0.4</SUB>As/Al<SUB>0.4</SUB>Ga<SUB>0.6</SUB>As Quantum Dots
Journal of Nanoscience and Nanotechnology·2014· 1 cited
A Special Issue on “Nanotechnology in Korea” Part-II
Journal of Nanoscience and Nanotechnology·2013
Effects of Growth Parameters on the Structural and Optical Properties of InP/InGaP Quantum Structures for 808-nm-Wavelength Emissions
Journal of Nanoscience and Nanotechnology·2012· 5 cited
Temperature dependence of the excitonic energy band gap in In(Ga)As nanostructures
Journal of the Korean Physical Society·2012· 6 cited
High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy
Journal of the Korean Physical Society·2011· 5 cited
Evolution of Wafer Shape and Localized Stress of Silicon Surrounded by Through Silicon Via Patterns along Various Process Integration Steps
2011
Theoretical And Experimental Studies Of The Effects Of Rapid Thermal Annealing In GaAs∕AlGaAs Quantum Dots Grown By Droplet Epitaxy
AIP conference proceedings·2011· 1 cited
Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources
AIP conference proceedings·2011· 1 cited
Ethical Issues in Nanomaterials Technology and Relevant Policy Recommendations
Applied Science and Convergence Technology·2010Open Access
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Frequent Co-authors

Jin Dong Song(12), Jungil Lee(8), K. N. Kang(7), W. J. Choi(6), J. I. Lee(5), J.I. Lee(4), Won Jun Choi(4), S.I. Jung(3), Jae‐Young Leem(3), J.I. Lee(3), Y.J. Park(3), Seungkyu Ha(3), Young-Chae Yoo(3), Y.J. Lee(2), J.S. Kim(2), J.J. Yoon(2), E.T. Cho(2), Eun Hye Lee(2), Jongsu Kim(2), J. D. Song(2)