J. D. Song

Dalian University of Technology — China

Physics and Astronomy · Physical Sciences

7h-index740citations40works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(27), Advanced Semiconductor Detectors and Materials(15), Semiconductor Lasers and Optical Devices(9), Quantum Dots Synthesis And Properties(8), Semiconductor materials and interfaces(8)

Publications40 total

Jensen-Shannon divergence coherence and its quantum speed limit
Chinese Physics B·2025Open Access
Fundamental Limits to Coherent Photon Generation with Solid-State Atomlike Transitions
Physical Review Letters·2019· 23 citedOpen Access
Cross-sectional STM on InGaAs/InAIAs laser structures
2018
Numerical Study on Modulation Efficiency Enhancement of SIS Optical Phase Shifter Using Negative Capacitance Effect
2018
Investigation of detection wavelength of Quantum Well Infrared-Photodetector
Applied Science and Convergence Technology·2015· 1 citedOpen Access
Influence of growth Temperature on the Formation of 10 monolayer-thick InGaAs Quantum dots formed with 5 repetitions of 1 monolayer-thick InAs and 1 monolayer-thick GaAs
Applied Science and Convergence Technology·2015· 1 cited
Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN
Journal of Luminescence·2015· 1 cited
Polarization dependence and optical Aharonov-Bohm oscillations in a single local QR in a large droplet QD
2015
Spatially‐resolved and polarized Raman scattering from a single Si nanowire
Journal of Raman Spectroscopy·2015· 4 cited
InAs/GaAs <i>p</i> – <i>i</i> – <i>p</i> quantum dots‐in‐a‐well infrared photodetectors operating beyond 200 K
Electronics Letters·2014· 26 cited
Near-Unity Coupling Efficiency of a Quantum Emitter to a Photonic Crystal Waveguide
Physical Review Letters·2014· 601 citedOpen Access
Thermal Treatment of Post-Buffer Growth and Short-Period Superlattice
한국진공학회 학술발표회초록집·2014
The Effect of Thin Intermediate Layers on Optical and Structural Characterization of GaAs/Al 0.3 Ga 0.7 As Multi-Quantum-Wells on GaAs-on-Si (100) Substrates
한국진공학회 학술발표회초록집·2014
New optical transition, structural, and ferromagnetic properties of InCrP:Zn implanted with Cr
Journal of Luminescence·2014· 4 cited
Fabrication of GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief Layer
Journal of Nanoscience and Nanotechnology·2014
Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy
Current Applied Physics·2014· 2 cited
Optical Emission Anisotropy in InP Aligned Quantum Dots
한국진공학회 학술발표회초록집·2014
Delayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layer
Journal of Applied Physics·2013· 4 cited
Raman scattering studies of (GaP)<sub><i>n</i></sub>/(InP)<sub><i>n</i></sub> (<i>n</i> = 1, 1.7, 2) short‐period superlattice structures
Journal of Raman Spectroscopy·2009· 2 cited
Rapid thermal annealing temperature dependence of noise properties in Au/n‐GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In<sub>0.2</sub>Ga<sub>0.8</sub>As wells
physica status solidi (b)·2009· 1 citedOpen Access
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Frequent Co-authors

W. J. Choi(11), Heesuk Rho(6), P. Offermans(5), Won Jun Choi(5), WooJhon Choi(4), S. J. Bae(4), J.I. Lee(3), J.H. Wolter(3), Yoon Shon(3), H.S. Kim(3), Tae Won Kang(3), Hyun Cheol Koo(3), N. Arpatzanis(3), C.A. Dimitriadis(3), Costas A. Charitidis(3), Jung-Ran Lim(3), PM Paul Koenraad(3), Y.H. Cho(2), P. M. Koenraad(2), I. K. Han(2)