M. I. Pavlyuk

El.En. Group (Italy) — Italy

Engineering · Physical Sciences

4h-index27citations12works0.02yr avg
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Research Topics

Magnetic Field Sensors Techniques(8), Sensor Technology and Measurement Systems(5), Advancements in Semiconductor Devices and Circuit Design(4), Magneto-Optical Properties and Applications(3), Electric Power Systems and Control(3)

Publications12 total

Numeral Simulation of Hall Element on the Basis of Buried Channel MOSFET
Problems of advanced micro- and nanoelectronic systems development·2019Open Access
A Physical Model of an SOI Field-Effect Hall Sensor
Semiconductors·2018
Multichannel and Multifunctional Frequency-output Sensors of Physical Effects Based on a Universal Field Transistor-type Sensing Element with a Silicon-on-Insulator Structure
Instruments and Experimental Techniques·2018· 2 cited
Numerical Simulation of N-well MOSFET Hall Element
Problems of advanced micro- and nanoelectronic systems development·2018· 1 citedOpen Access
The Development of Constructive-Technological Decisions on Creation of a Family of Microelectronic Elements on the «Silicon on Insulator» (SOI) Structures to Provide the Ability to Create Sensors of External Influences of a Various Functional Purpose
2017Open Access
Physical Model of SOI Field-Effect Hall Sensor
Proceedings of Universities ELECTRONICS·2017· 7 citedOpen Access
A stabilizer of micro- and small currents based on a field hall-effect sensor with autocompensation of the temperature effect
Instruments and Experimental Techniques·2016· 1 cited
A silicon field-effect hall sensor with an extended operating temperature range
Instruments and Experimental Techniques·2016· 4 cited
A magnetosensitive thin-film silicon Hall-type field-effect transistor with operating temperature range expanded up to 350°C
Technical Physics Letters·2016· 5 cited
An autogenerator induction-to-frequency converter circuit based on a field-effect Hall sensor with a regulated frequency
Instruments and Experimental Techniques·2015· 2 cited
Field Controlled Si Hall Element with Extended Operation Temperature Range from Liquid Helium Temperature up to 650K
Procedia Engineering·2015· 4 citedOpen Access
P9.3 - Sensors with SOI FET Primary Transducer and Frequency Output
Proceedings SENSOR 2015·2015· 1 citedOpen Access

Frequent Co-authors

A. V. Leonov(8), A. A. Malykh(7), V.N. Mordkovich(7), M. A. Korolev(2), Р.З. Хафизов(2), A.E. Timofeev(2), S.S. Dedkova(1), Svetlana S. Devlikanova(1), M. I. Kakoulin(1), A. B. Odnolko(1)