V.N. Mordkovich

Institute of Microelectronics Technology and High Purity Materials — Russia

Engineering · Physical Sciences

8h-index212citations79works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(39), Ion-surface interactions and analysis(30), Integrated Circuits and Semiconductor Failure Analysis(18), Semiconductor materials and devices(15), Magnetic Field Sensors Techniques(12)

Publications79 total

Simulation of Hall Field Elements Based on Nanosized Silicon-on-Insulator Heterostructures
Russian Microelectronics·2021· 2 cited
Study of SOI Field-Effect Hall Sensors in the Partial Depletion Mode
Russian Microelectronics·2020
Simulation of Hall field elements based on nanoscale silicon-on-insulator heterostructures
Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering·2020Open Access
Study on SOI Field-Effect Hall Sensor in Partial Depletion Mode
Proceedings of Universities ELECTRONICS·2019· 1 cited
The Study of SOI Split-drain Field-effect Hall Sensor in Partial Depletion Mode
2019· 1 cited
Multichannel and Multifunctional Frequency-output Sensors of Physical Effects Based on a Universal Field Transistor-type Sensing Element with a Silicon-on-Insulator Structure
Instruments and Experimental Techniques·2018· 2 cited
The Development of Constructive-Technological Decisions on Creation of a Family of Microelectronic Elements on the «Silicon on Insulator» (SOI) Structures to Provide the Ability to Create Sensors of External Influences of a Various Functional Purpose
2017Open Access
Influence of the Chemical Activity of Implanted Ions on the Structure of the Damaged Si Layer in SIMOX Substrates
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2017
A silicon field-effect hall sensor with an extended operating temperature range
Instruments and Experimental Techniques·2016· 4 cited
A magnetosensitive thin-film silicon Hall-type field-effect transistor with operating temperature range expanded up to 350°C
Technical Physics Letters·2016· 5 cited
An autogenerator induction-to-frequency converter circuit based on a field-effect Hall sensor with a regulated frequency
Instruments and Experimental Techniques·2015· 2 cited
Characterization of crystal structure features of a SIMOX substrate
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2015· 3 cited
Field Controlled Si Hall Element with Extended Operation Temperature Range from Liquid Helium Temperature up to 650K
Procedia Engineering·2015· 4 citedOpen Access
P9.3 - Sensors with SOI FET Primary Transducer and Frequency Output
Proceedings SENSOR 2015·2015· 1 citedOpen Access
Influence of the chemical nature of implanted ions on the structure of a silicon layer damaged by implantation
Crystallography Reports·2013· 3 cited
The features of magnetosensitive sensors based on a field-effect hall probe
Instruments and Experimental Techniques·2012· 5 cited
Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures
Semiconductors·2011· 10 cited
<i>p-n</i>junction on high-pressure-high-temperature grown single crystal diamond: UV-emission spectra and electrical properties
Journal of Physics Conference Series·2008· 1 citedOpen Access
Radiation‐induced structural transformations in a silicon layer of SOI
physica status solidi (a)·2007· 1 cited
Controllable Highly Sensitive Silicon Hall Element with Improved Reliabylity Under Extreme Conditions
2007
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Frequent Co-authors

A. V. Leonov(15), A.B. Danilin(12), E.M. Temper(6), M. Yu. Barabanenkov(6), D. M. Pazhin(6), A. A. Malykh(6), M. I. Pavlyuk(6), Yu. N. Erokhin(5), К. Д. Щербачев(5), В. Т. Бублик(5), A. F. Vyatkin(5), A. A. Malinin(4), O.I. Vyletalina(4), N.M. Omel'yanovskaya(4), В. А. Харченко(4), K.A. Drakin(3), A. Yu. Kuznetsov(3), И. И. Ходос(3), В. В. Сарайкин(3), S. N. Boldyrev(3)