O.I. Vyletalina

Mikron (Russia) — Russia

Engineering · Physical Sciences

2h-index26citations8works0.02yr avg
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Research Topics

Semiconductor materials and devices(5), Ion-surface interactions and analysis(5), Silicon Nanostructures and Photoluminescence(3), Thin-Film Transistor Technologies(2), Silicon and Solar Cell Technologies(2)

Publications8 total

Harnessing reverse annealing phenomenon for shallow p-n junction formation
Journal of Applied Physics·1997· 1 cited
Boron Gettering by Fluorine in Ion Implanted Silicon
MRS Proceedings·1997
Sequential ion beam synthesis of buried Si3N4 layers in silicon
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1993· 1 cited
Spatial localization of the buried ion-beam synthesized layer of silicon dioxide inclusions in silicon
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1993· 6 cited
Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses
Materials Science and Engineering B·1992
Ion beam synthesis of Si3N4 amorphous buried layers
Materials Science and Engineering B·1992
Peculiarities of buried silicon oxynitride layer synthesis by sequential oxygen and nitrogen ion implantation in silicon
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1991· 16 cited
Behavior of Implanted Nitrogen in Si with the Buried Layer of SiO<sub>2</sub> Precipitates
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·1991· 2 cited

Frequent Co-authors

A.B. Danilin(6), A. A. Malinin(5), V.N. Mordkovich(5), K.A. Drakin(4), Andrey Petrov(2), В. В. Сарайкин(2), A. F. Petrov(2), L.Ya. Krasnobaev(2), J. J. Cuomo(2), V.V. Kukin(1), V. V. Saraykin(1), A. I. Belogorokhov(1), L.A. Charni(1), Yu. N. Parkhomenko(1)