К. Д. Щербачев

National University of Science and Technology — Russia

Engineering · Physical Sciences

14h-index525citations85works0.02yr avg
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Research Topics

Ion-surface interactions and analysis(28), Silicon and Solar Cell Technologies(26), Semiconductor materials and interfaces(18), ZnO doping and properties(17), GaN-based semiconductor devices and materials(15)

Publications85 total

Application of X-ray diffraction and reflectometry methods for analysis of damaged layers on polar faces of ZnO after surface chemical-mechanical treatment
Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering·2022· 2 citedOpen Access
Application of X-ray diffraction and reflectometry methods for analysis of damaged layers on polar faces of ZnO after surface chemical-mechanical treatment
Modern Electronic Materials·2022· 1 citedOpen Access
XAFS and TEM Investigation of Nanocluster Formation in 64Zn+ Ion-Implanted and Thermo-Oxidized SiO2 Film
Journal of Electronic Materials·2020· 2 cited
High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors
physica status solidi (a)·2020· 7 cited
In-depth structural analysis of swift heavy ion irradiation in KY(WO<sub>4</sub>)<sub>2</sub> for the fabrication of planar optical waveguides
Optical Materials Express·2019· 4 citedOpen Access
Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis
Modern Electronic Materials·2019Open Access
Study of a SiO2/Si Structure Implanted with 64Zn+ and 16O+ Ions and Heat Treated in a Neutral Inert Environment
Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques·2019· 2 cited
Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire
APL Materials·2019· 48 citedOpen Access
Defect structure and properties of Zn diffusion doped Si after swift Xe ion irradiation
Journal of Physics Conference Series·2019Open Access
Study of the origin of the defects in La3Ga5.5Ta0.5O14 single crystals
Optical Materials·2019· 7 cited
Modification of Zn ion hot implanted Si by swift Xe ion irradiation
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2019· 1 cited
Capabilities of X-ray diffuse scattering method for study of microdefects in semiconductor crystals
Modern Electronic Materials·2018Open Access
Structural evolution of thermal annealed Si(0 0 1) surface layers fabricated by plasma immersion He+ implantation
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2018
Strengthening of mechanically alloyed Al-based alloy with high Zr contents
Materials Science and Engineering A·2017· 32 cited
Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments
Journal of Applied Physics·2017· 35 cited
Structural properties of the formation of zinc-containing nanoparticles obtained by ion implantation in Si (001) and subsequent thermal annealing
Modern Electronic Materials·2017· 1 citedOpen Access
Influence of the Chemical Activity of Implanted Ions on the Structure of the Damaged Si Layer in SIMOX Substrates
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2017
Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates
Crystals·2017· 11 citedOpen Access
Thermal and Lattice Misfit Stress Relaxation in Growing AlN Crystal with Simultaneous Evaporation of SiC Substrate
Materials science forum·2017· 2 cited
Influence of annealing temperature and its atmosphere on the properties of zinc implanted silicon
Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques·2017· 1 cited
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Frequent Co-authors

В. Т. Бублик(13), M. I. Voronova(9), A. Y. Polyakov(7), N. B. Smirnov(7), В. В. Привезенцев(7), N. Yu. Tabachkova(6), E. B. Yakimov(5), Yu. A. Agafonov(5), В. И. Зиненко(5), V.N. Mordkovich(5), S. J. Pearton(4), In‐Hwan Lee(4), Д. А. Киселев(4), N. G. Kolin(4), E. N. Mokhov(4), T. S. Argunova(4), Jung Ho Je(4), O. P. Kazarova(4), D. M. Pazhin(4), А. В. Черных(3)