Yu. N. Erokhin

Engineering · Physical Sciences

7h-index134citations22works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(18), Semiconductor materials and interfaces(9), Integrated Circuits and Semiconductor Failure Analysis(9), Ion-surface interactions and analysis(7), Semiconductor materials and devices(5)

Publications22 total

Experimental and theoretical analysis of dopant activation in double implanted silicon by pulsed laser thermal annealing
2009· 1 cited
Ultra-low cost and high performance 65nm CMOS device fabricated with plasma doping
2004· 11 cited
300 mm Ultra-Thin AdvantoxTM MLD SIMOX Wafers Manufactured Using i2000 Oxygen Implanter
2002
Charge State Defect Engineering of Silicon During Ion Implantation
MRS Proceedings·1996· 1 cited
Charge State Defect Engineering of Silicon During Ion Implantation
MRS Proceedings·1996· 3 cited
Suppression of transient enhanced diffusion following <i>in situ</i> photoexcitation during boron ion implantation
Applied Physics Letters·1995· 6 cited
<i>In</i> <i>situ</i> electric field perturbations of deep trap accumulation in silicon during proton ion implantation
Applied Physics Letters·1995· 5 cited
Recombination enhanced suppression of deep trap accumulation in silicon during He+ ion implantation
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1995· 7 cited
Suppression of self-interstitials in silicon during ion implantation via in-situ photoexcitation
1995Open Access
Suppression of Self-Interstitials in Silicon During on Implantation via <i>in-situ</i> Photoexcitation
MRS Proceedings·1994· 2 cited
Spatially confined nickel disilicide formation at 400 °C on ion implantation preamorphized silicon
Applied Physics Letters·1993· 18 cited
Morphological instability and Si diffusion in nanoscale cobalt silicide films formed on heavily phosphorus doped polycrystalline silicon
Applied Physics Letters·1993· 17 cited
The Influence of an <i>In-Situ</i> Electric Field on H<sup>+</sup> and He<sup>+</sup> Implantation Induced Defects in Silicon
MRS Proceedings·1993· 3 cited
Athermal nature of impact exerted by ultraviolet radiation on the accumulation of radiation defects during ion implantation into silicon
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1992· 9 cited
Mesotaxy by nickel diffusion into a buried amorphous silicon layer
Materials Science and Engineering B·1992· 14 cited
Thin Ni Silicide Formation by Low Temperature-Induced Metal Atom Reaction with Ion Implanted Amorphous Silicon
MRS Proceedings·1992· 1 cited
Stability of Nanoscale Cobalt Silicide Film Formation on Polysilicon
MRS Proceedings·1992· 6 cited
Photostimulated defect-impurity reactions during ion bombardment of Si
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1991· 9 cited
The peculiarities of the new phase formation by O+ ion implantation into silicon under thermo-ionization excitation
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1991· 6 cited
A Novel Process to Form Epitaxial Si Structures With Buried Silicide
MRS Proceedings·1991· 1 cited
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Frequent Co-authors

G. A. Rozgonyi(11), J. Ravi(7), C. W. White(7), B.K. Patnaik(6), V.N. Mordkovich(5), S. Pramanick(4), A.B. Danilin(4), C. W. White(3), Feng Hong(2), R. Grötzschel(2), S. Roorda(2), W.C. Sinke(2), Richard A. Brown(2), Kenneth J. Christensen(2), S. Oktyabrsky(1), A. F. Vyatkin(1), F. Lallement(1), B. Duriez(1), A. Grouillet(1), F. Arnaud(1)