J. M. Molarius

VTT Technical Research Centre of Finland — Finland

Engineering · Physical Sciences

16h-index954citations51works0.02yr avg
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Research Topics

Semiconductor materials and devices(27), Metal and Thin Film Mechanics(19), Copper Interconnects and Reliability(14), Semiconductor materials and interfaces(13), Silicon and Solar Cell Technologies(8)

Publications51 total

Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators
Thin Solid Films·2009· 12 cited
Electrode metallization for high permittivity oxide RF thin film capacitors
Journal of the European Ceramic Society·2006
ZnO for thin film BAW devices
2006· 2 cited
Interfacial reactions in the Si/TaC/Cu system
Microelectronic Engineering·2004· 17 cited
Piezoelectric ZnO films by r.f. sputtering
Journal of Materials Science Materials in Electronics·2003· 58 cited
ZnO based thin film bulk acoustic wave filters for EGSM band
2002· 20 cited
Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems
Microelectronic Engineering·2002· 9 cited
Reactive sputter deposition and properties of TaxN thin films
Microelectronic Engineering·2002· 159 cited
Tantalum carbide and nitride diffusion barriers for Cu metallisation
Microelectronic Engineering·2002· 52 cited
Effect of oxygen on the reactions in the Si/Ta/Cu metallization system
Journal of materials research/Pratt's guide to venture capital sources·2001· 27 cited
Stability of TaC Diffusion BarrierBetween Si and Cu
2001
Chemical stability of Ta diffusion barrier between Cu and Si
Thin Solid Films·2000· 39 cited
Materials Research Society Symposium - Proceedings
2000· 15 cited
Chemical stability of tantalum as diffusion barrier between copper and silicon
1999
Chemical Stability of Ta Diffusion Barrier Between Cu and Si
Redalyc (Universidad Autónoma del Estado de México)·1999· 2 citedOpen Access
R.F.-sputtered tantalum-based diffusion barriers between copper and silicon
Redalyc (Universidad Autónoma del Estado de México)·1999· 4 citedOpen Access
Flow pattern defects in Czochralski-grown silicon crystals
Physica Scripta·1997· 2 cited
Structural properties of Ge-implanted Si1 − xGex layers
Vacuum·1995· 3 cited
Rapid thermal annealing of Si1−Ge layers formed by germanium ion implantation
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1994· 8 cited
The effects of prolonged high-voltage STM scanning on an oxidized silicon wafer surface
Nanotechnology·1994· 4 cited
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Frequent Co-authors

Ari Korhonen(14), E. Kolawa(13), Tomi Laurila(10), J.K. Kivilahti(10), M‐A. Nicolet(9), I. Suni(8), C. W. Nieh(6), Ke Zeng(6), Tommi Riekkinen(5), E.O. Ristolainen(5), J. L. Tandon(5), W. Flick(5), Markku Ylilammi(4), Kazuhiko Morishita(4), M.S. Sulonen(4), Jaakko Saarilahti(4), A. Nurmela(3), L.T. Tran(3), Jun Wei(3), F. C. T. So(3)