K. Koi

Oregon Health & Science University — United States

Physics and Astronomy · Physical Sciences

14h-index795citations45works1.02yr avg
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Research Topics

Magnetic properties of thin films(34), Advanced Memory and Neural Computing(19), Semiconductor materials and devices(14), Ferroelectric and Negative Capacitance Devices(12), Copper Interconnects and Reliability(7)

Publications45 total

Filler Size Effects Surface Properties of Composites Pre-/Post-Toothbrush Abrasion, But Not Biofilm Growth
Dental Materials·2025
Microscopic Modeling of MgO Barrier Degradation Due to Interface Oxygen Frenkel Defects in Scaled MTJ Toward High-Density STT-MRAM
2024· 2 cited
14nm High-Performance MTJ with Accelerated STT-Switching and High-Retention Doped Co-Pt Alloy Storage Layer for 1Znm MRAM
2023· 6 cited
Low write current and strong durability in high-speed spintronics memory (spin-Hall MRAM and VoCSM) through development of a shunt-free design process and W spin-Hall electrode
Journal of Magnetism and Magnetic Materials·2019· 6 cited
Real-time observation of fast and highly reliable magnetization switching in Voltage-Control Spintronics Memory (VoCSM)
Applied Physics Letters·2019· 22 cited
From STT-MRAM to Voltage-Control Spintronics Memory (VoCSM) in Pursuit of Memory Systems with Lower Energy Consumption
Journal of Magnetics·2019· 4 cited
Voltage-control spintronics memory (VoCSM) toward development of a 4F<sup>2</sup>-cell with strained in-plane-MTJ
2019 Electron Devices Technology and Manufacturing Conference (EDTM)·2019· 4 cited
Binary and ternary convolutional neural network acceleration by in-nonvolatile memory computing with Voltage Control Spintronics Memory (VoCSM)
2019 Electron Devices Technology and Manufacturing Conference (EDTM)·2019· 3 cited
Voltage-Control Spintronics Memory (VoCSM) with Low Write Current using Highly-Selective Patterning Process
Journal of Magnetics·2018· 3 cited
Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Ta</mml:mi><mml:mtext>−</mml:mtext><mml:mrow><mml:mrow><mml:mi mathvariant="normal">B</mml:mi></mml:mrow></mml:mrow></mml:math> Spin Hall Electrode
Physical Review Applied·2018· 33 cited
Saving Energy Consumption of Memory Systems by Voltage-Control Spintronics Memory (VoCSM)
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials·2018
(Invited) High Write Efficiency in Voltage-Control Spintronics Memory (VoCSM) for Saving Energy Consumption of Nonvolatile Memories
ECS Meeting Abstracts·2018
High-Speed Voltage Control Spintronics Memory (VoCSM) Having Broad Design Windows
2018· 3 cited
Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system
Applied Physics Express·2018· 36 cited
The Pursuit of Saving Energy Consumption of Memory Systems by MRAMs, from STT-MRAM to Voltage-Control Spintronics Memory (VoCSM)
2018 IEEE International Magnetics Conference (INTERMAG)·2018· 1 cited
Coexistence of Large Voltage Controlled Magnetic Anisotropy, Large Surface Anisotropy, and Large TMR by a new MTJ structure having MgO/CoFeB/Ir/CoFeB
2018 IEEE International Magnetics Conference (INTERMAG)·2018· 2 cited
Reliable Estimation of TaB Spin Hall Angle by Incorporating the Interfacial Transparency and Isolating Inverse Spin Hall Effect in ST-FMR Analysis
2018 IEEE International Magnetics Conference (INTERMAG)·2018· 1 cited
Ultra-high-efficient Writing in Voltage-Control Spintronics Memory(VoCSM); the Most Promising Embedded Memory for Deep Learning
2018· 4 cited
Ultra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep Learning
IEEE Journal of the Electron Devices Society·2018· 2 citedOpen Access
Switching Mechanism Design for High-speed Voltage-Control Spintronics Memory (VoCSM) Considering the Operation Window
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials·2017
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Frequent Co-authors

H. Yoda(23), S. Shirotori(23), T. Inokuchi(23), B. Altansargai(23), Y. Ohsawa(22), A. Kurobe(22), N. Shimomura(18), H. Sugiyama(18), S. Oikawa(18), M. Ishikawa(17), Yushi Kato(16), M. Sahashi(14), Hideaki Fukuzawa(12), Mitsuaki Shimizu(12), Ajay Tiwari(12), Y. Kamiguchi(11), M. Iwasaki(10), Y. Saito(9), M. Takagishi(8), Kazutaka Ikegami(8)