H. Sugiyama

Tokyo University of Agriculture and Technology — Japan

Physics and Astronomy · Physical Sciences

22h-index1.4kcitations122works1.02yr avg
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Research Topics

Magnetic properties of thin films(33), Organometallic Complex Synthesis and Catalysis(20), Physics of Superconductivity and Magnetism(18), Quantum and electron transport phenomena(17), Semiconductor materials and devices(16)

Publications122 total

Interband plasmonic nanoresonators for enhanced thermoelectric photodetection
Nanophotonics·2025· 1 citedOpen Access
CCDC 2098049: Experimental Crystal Structure Determination
The Cambridge Structural Database·2022Open Access
Real-time observation of fast and highly reliable magnetization switching in Voltage-Control Spintronics Memory (VoCSM)
Applied Physics Letters·2019· 22 cited
From STT-MRAM to Voltage-Control Spintronics Memory (VoCSM) in Pursuit of Memory Systems with Lower Energy Consumption
Journal of Magnetics·2019· 4 cited
Voltage-control spintronics memory (VoCSM) toward development of a 4F<sup>2</sup>-cell with strained in-plane-MTJ
2019 Electron Devices Technology and Manufacturing Conference (EDTM)·2019· 4 cited
Binary and ternary convolutional neural network acceleration by in-nonvolatile memory computing with Voltage Control Spintronics Memory (VoCSM)
2019 Electron Devices Technology and Manufacturing Conference (EDTM)·2019· 3 cited
Voltage-Control Spintronics Memory (VoCSM) with Low Write Current using Highly-Selective Patterning Process
Journal of Magnetics·2018· 3 cited
Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Ta</mml:mi><mml:mtext>−</mml:mtext><mml:mrow><mml:mrow><mml:mi mathvariant="normal">B</mml:mi></mml:mrow></mml:mrow></mml:math> Spin Hall Electrode
Physical Review Applied·2018· 33 cited
Saving Energy Consumption of Memory Systems by Voltage-Control Spintronics Memory (VoCSM)
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials·2018
The Pursuit of Saving Energy Consumption of Memory Systems by MRAMs, from STT-MRAM to Voltage-Control Spintronics Memory (VoCSM)
2018 IEEE International Magnetics Conference (INTERMAG)·2018· 1 cited
Coexistence of Large Voltage Controlled Magnetic Anisotropy, Large Surface Anisotropy, and Large TMR by a new MTJ structure having MgO/CoFeB/Ir/CoFeB
2018 IEEE International Magnetics Conference (INTERMAG)·2018· 2 cited
Reliable Estimation of TaB Spin Hall Angle by Incorporating the Interfacial Transparency and Isolating Inverse Spin Hall Effect in ST-FMR Analysis
2018 IEEE International Magnetics Conference (INTERMAG)·2018· 1 cited
Ultra-high-efficient Writing in Voltage-Control Spintronics Memory(VoCSM); the Most Promising Embedded Memory for Deep Learning
2018· 4 cited
Development and validation of a nomogram for predicting testicular torsion among acute scrotums using environmental conditions and physical examinations
European Urology Supplements·2018
Ultra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep Learning
IEEE Journal of the Electron Devices Society·2018· 2 citedOpen Access
Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials·2017· 1 cited
Switching Mechanism Design for High-speed Voltage-Control Spintronics Memory (VoCSM) Considering the Operation Window
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials·2017
High-speed voltage-control spintronics memory focused on reduction in write current
2017
Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height
Applied Physics Letters·2017· 41 cited
Voltage-Control Spintronics Memory With a Self-Aligned Heavy-Metal Electrode
IEEE Transactions on Magnetics·2017· 36 cited
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Frequent Co-authors

Y. Saito(16), T. Inokuchi(15), M. Ishikawa(11), Kazuko Matsumoto(9), H. Yoda(5), N. Shimomura(5), Y. Ohsawa(5), S. Shirotori(5), B. Altansargai(5), K. Koi(5), S. Oikawa(5), A. Kurobe(5), Kohei Hamaya(5), H. Wakana(5), Seiji Adachi(5), Y. Tarutani(5), K. Tanabe(5), K. Inomata(5), Yong‐Shou Lin(5), Sandro Gambarotta(4)