S. Misawa

Engineering · Physical Sciences

32h-index4.4kcitations134works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(60), Semiconductor materials and devices(55), Copper Interconnects and Reliability(22), Semiconductor materials and interfaces(21), Physics of Superconductivity and Magnetism(19)

Publications134 total

CCDC 787409: Experimental Crystal Structure Determination
The Cambridge Structural Database·2010Open Access
1P148 Unusual movement of actin filament decorated with TRM-labeled-Troponin
Seibutsu Butsuri·2005Open Access
Outgassing Rate and Morphology of Surface Oxide Layer of Aluminum Alloy for Vacuum Equipment Use.
Shinku·2000· 8 citedOpen Access
Si-adsorption induced phase transition on the 3C–SiC(001) surface
Surface Science·1999· 4 cited
Adsorption of Al on Si(100) at high temperature
Physical review. B, Condensed matter·1999· 16 cited
Perfect cellular disorder in a two-dimensional system: Si cells on the 3C-SiC(001) surface
Surface Science·1999· 13 cited
Adsorption and growth of Al on Si(100) in the initial stage
Applied Physics A·1999· 7 cited
Intrinsic Defects in Cubic Silicon Carbide
physica status solidi (a)·1997· 148 cited
Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures
Materials Science and Engineering B·1997
Structures of Al/Si(100) surfaces as determined by scanning tunneling microscopy
Journal of Applied Physics·1996· 6 cited
Space fluctuation of empty states on 3C-SiC(001) surface
Surface Science·1996· 17 cited
A new system of TiN coating on interior surface of cylindrical vacuum chamber by hollow cathode discharge method
Vacuum·1996· 7 cited
Growth kinetics of aluminum on the Si(100) surface studied by scanning tunneling microscopy
Surface Science·1996· 7 cited
Evaluation of the Orientation of Particles in Magnetic Recording Media Using Polarized Light Reflection.
Journal of the Magnetics Society of Japan·1996Open Access
Kinetic Behavior of Al Growth on the Si(100) Surface Studied by Scanning Tunneling Microscopy
真空·1995
Study of 3C-SiC crystal defects by microbeam channeling methods
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1995· 1 cited
Initial stage of aluminum thin film growth on Si(100) surfaces as observed by scanning tunneling microscopy
Surface Science·1995· 12 cited
Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si
Journal of Applied Physics·1995· 64 cited
Additional dimer-row structure of 3C-SiC(001) surfaces
1994
Additional dimer-row structure of 3<i>C</i>-SiC(001) surfaces observed by scanning tunneling microscopy
Physical review. B, Condensed matter·1994· 65 cited
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Frequent Co-authors

S. Yoshida(32), E. Sakuma(24), Hajime Okumura(17), Kazuhiko Endo(14), Sadafumi Yoshida(10), Hiroshi Daimon(10), S. Gonda(7), I. Nashiyama(5), M. Yamanaka(5), Shiro Hara(5), Mitsugu Yamanaka(5), Y. Kumashiro(4), A. Itoh(3), H. Itoh(3), M. Yoshikawa(3), H. Yamasaki(3), Keiji Kajimura(3), Iwao Ohdomari(3), Y. Aoyagi(3), M. Shinohara(3)