J. Adkisson

GlobalFoundries (United States) — United States

Engineering · Physical Sciences

12h-index476citations48works0.02yr avg
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Research Topics

Semiconductor materials and devices(22), Advancements in Semiconductor Devices and Circuit Design(21), Radio Frequency Integrated Circuit Design(19), Integrated Circuits and Semiconductor Failure Analysis(10), Semiconductor Quantum Structures and Devices(9)

Publications48 total

Impact of Emitter Width Scaling on Performance and Ruggedness of SiGe HBTs for PA Applications
2018· 5 cited
On the Challenges of SiGe HBTs in Advanced BiCMOS Technology Toward Half THz f<sub>MAX</sub>
ECS Meeting Abstracts·2016
Impact of Lateral Scaling on Silicon Germanium High Breakdown Power Amplifier Device Performance
ECS Meeting Abstracts·2016
On the Challenges of SiGe HBTs in Advanced BiCMOS Technology Toward Half THz f<sub>MAX</sub>
ECS Transactions·2016· 1 cited
Investigation of HBT layout impact on f&lt;inf&gt;T&lt;/inf&gt; doubler performance for 90nm SiGe HBTs
2014· 9 cited
A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
2014· 100 cited
SiGe HBTs in 90nm BiCMOS Technology Demonstrating f<sub>T</sub>/f<sub>MAX</sub> 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance
ECS Transactions·2014· 11 cited
A Novel Approach to Isolating the Edge of the Shallow Trench Isolation in SiGe HBTs for Improved Device Performance
ECS Transactions·2014
SiGe HBTs in 90nm BiCMOS Technology Demonstrating f<sub>T</sub>/f<sub>MAX</sub> 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance
ECS Meeting Abstracts·2014
A Novel Approach to Isolating the Edge of the Shallow Trench Isolation in SiGe HBTs for Improved Device Performance
ECS Meeting Abstracts·2014
SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz f<sub>T</sub>/f<sub>MAX</sub> through reduced R<sub>b</sub> and C<sub>cb</sub> parasitics
2013· 10 cited
Study of mutual and self-thermal resistance in 90nm SiGe HBTs
2013· 10 cited
Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency
2013· 6 cited
Understanding the Effects of Epitaxy Artifacts on SiGe HBT Performance through Detailed Process/Device Simulation
ECS Transactions·2013· 2 cited
Improved Frequency Response in a SiGe npn Device through Improved Dopant Activation
ECS Transactions·2013· 3 cited
A Self-Aligned Sacrificial Emitter Process for High Performance SiGe HBT in BiCMOS
ECS Transactions·2013· 1 citedOpen Access
Co-integration of high-performance and high-breakdown SiGe HBTs in a BiCMOS technology
2012· 8 cited
A novel Ccb and Rb reduction technique for high-speed SiGe HBTs
2012· 4 cited
Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology
2012· 28 cited
Improved Frequency Response in a SiGe npn Device through Improved Dopant Activation
ECS Meeting Abstracts·2012Open Access
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Frequent Co-authors

Renata Camillo-Castillo(21), Vibhor Jain(18), D.L. Harame(18), John J. Pekarik(15), Peter Gray(14), Marwan Khater(12), Peng Cheng(12), Bjorn Zetterlund(10), Qizhi Liu(10), John Ellis-Monaghan(8), Adam W. DiVergilio(6), Jeff Gambino(6), J. S. Harris(6), Vikas Kaushal(5), Steven J. Holmes(5), B. Leidy(5), M. Jaffé(5), R. J. Rassel(4), T. I. Kamins(4), Qizhi Z. Liu(4)