John J. Pekarik

GlobalFoundries (United States) — United States

Engineering · Physical Sciences

18h-index1.3kcitations78works0.32yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(56), Advancements in Semiconductor Devices and Circuit Design(23), Semiconductor materials and devices(22), Microwave Engineering and Waveguides(18), Photonic and Optical Devices(14)

Publications78 total

Design of PNP SiGe HBTs Towards 200 GHz f<sub>max</sub>
ECS Meeting Abstracts·2024
Design of PNP SiGe HBTs Towards 200 GHz f<sub>max</sub>
ECS Transactions·2024· 1 cited
SiGe HBT integrated in a 22 nm FDSOI
2024
415/610GHz f<sub>T</sub>/f<sub>MAX</sub> SiGe HBTs Integrated in a 45nm PDSOI BiCMOS process
2022 International Electron Devices Meeting (IEDM)·2022· 18 cited
SiGe HBTs for Power Amplifiers in Front-End of Radio Communication Systems
2022· 3 cited
Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with f<sub>T</sub>/f<sub>max</sub> of 340/410 GHz
2022· 14 cited
Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs
2021
SiGe HBTs with ${f_{T}/f_{\max}\,\sim\,375/510GHz}$ Integrated in 45nm PDSOI CMOS
2021· 16 cited
High Performance SiGe HBT Performance Variability Learning by Utilizing Neural Networks and Technology Computer Aided Design
ECS Meeting Abstracts·2020
High Performance SiGe HBT Performance Variability Learning by Utilizing Neural Networks and Technology Computer Aided Design
ECS Transactions·2020· 4 cited
CMOS Technology for Wireless Applications
2017
On the Challenges of SiGe HBTs in Advanced BiCMOS Technology Toward Half THz f<sub>MAX</sub>
ECS Meeting Abstracts·2016
On the Challenges of SiGe HBTs in Advanced BiCMOS Technology Toward Half THz f<sub>MAX</sub>
ECS Transactions·2016· 1 cited
90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters
2015· 2 cited
Investigation of HBT layout impact on f&lt;inf&gt;T&lt;/inf&gt; doubler performance for 90nm SiGe HBTs
2014· 9 cited
An electrothermal PIN diode model with substrate injection
2014· 7 cited
A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
2014· 100 cited
SiGe HBTs in 90nm BiCMOS Technology Demonstrating f<sub>T</sub>/f<sub>MAX</sub> 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance
ECS Transactions·2014· 11 cited
A Novel Approach to Isolating the Edge of the Shallow Trench Isolation in SiGe HBTs for Improved Device Performance
ECS Transactions·2014
SiGe HBTs in 90nm BiCMOS Technology Demonstrating f<sub>T</sub>/f<sub>MAX</sub> 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance
ECS Meeting Abstracts·2014
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Frequent Co-authors

Vibhor Jain(15), B. Jagannathan(11), Peter Gray(10), Renata Camillo-Castillo(10), D.L. Harame(10), John R. Long(10), J. Adkisson(9), L. Wagner(8), Bjorn Zetterlund(7), Adam W. DiVergilio(7), Peng Cheng(7), Qizhi Liu(7), Marwan Khater(6), D. Greenberg(6), Vikas Kaushal(5), Sungjae Lee(4), Aaron Vallett(4), R. Groves(4), S.M. Csutak(4), G. Freeman(3)