Yoshiharu Yamauchi

Physics and Astronomy · Physical Sciences

15h-index624citations48works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(26), GaN-based semiconductor devices and materials(20), Semiconductor materials and devices(16), Advanced Semiconductor Detectors and Materials(11), Semiconductor Lasers and Optical Devices(7)

Publications48 total

Directing Students to Meta-Recognition Utilizing Good Learning Behavior in E-Learning
2018
Structural and electrical properties of H-terminated diamond field-effect transistor
Diamond and Related Materials·2009· 24 cited
Diamond FETs on boron‐implanted and high‐pressure and high‐temperature annealed homoepitaxial diamond
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008· 2 cited
Gate interfacial layer in hydrogen-terminated diamond field-effect transistors
Diamond and Related Materials·2008· 38 cited
RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
Japanese Journal of Applied Physics·2006· 14 cited
Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
Japanese Journal of Applied Physics·2005· 7 cited
High-power characteristics of GaN/InGaN double heterojunction bipolar transistors
Applied Physics Letters·2004· 57 cited
Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
2004
Common - Emitter Current - Voltage Characteristics of Pnp AlGaN/GaN Heterojunction Bipolar Transistors
2004
Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE
Japanese Journal of Applied Physics·2003· 18 cited
High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors with a Regrown p-InGaN Base Layer
MRS Proceedings·2003
Structural and Optical Properties of AlGaInN Grown by MOVPE
2002
In situ observation of nitridation of GaAs (001) surfaces by infrared reflectance spectroscopy
Applied Surface Science·1996· 20 cited
In Situ Monitoring of Adsorption and Desorption of Atomic Nitrogen on GaAs (001) and (111)A Surfaces
Japanese Journal of Applied Physics·1996· 20 cited
Arsenic Coverages and Surface Structures of As-Stabilized GaAs (001) Surfaces during Metalorganic Chemical Vapor Deposition Observed by Reflectance Difference
Japanese Journal of Applied Physics·1993· 11 cited
In Situ Spectrum Observation of Ga Deposition Process during GaAs Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
Japanese Journal of Applied Physics·1993· 3 cited
Spectral Observation of As-Stabilized GaAs Surfaces in Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
Japanese Journal of Applied Physics·1993· 34 cited
Low-Temperature GaAs Metalorganic Chemical Vapor Deposition Using Dimethylamine Gallane and Arsine
Japanese Journal of Applied Physics·1993· 8 cited
In Situ Observation of MBE-Grown GaAs(001) Surfaces Using Surface Photo-Absorption and Reflectance Difference
1993
In-Situ Surface Photo-Absorption Study of Surface Structure and Desorption Dynamics for As-Stabilized GaAs MOCVD Surface
1993
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Frequent Co-authors

Toshiki Makimōto(16), Yoshiji Horíkoshi(12), Naoki Kobayashi(11), Nobuhiko Susa(10), Kunihiko Uwai(8), Naoki Kobayashi Naoki Kobayashi(8), Hiroshi Kanbe(7), Makoto Kasu(6), Kazuhide Kumakura(5), K. Ueda(4), Hiroaki Ando(3), Yasuyuki Kobayashi(3), Hiroyuki Kageshima(2), T. Kido(2), Yoshitaka Taniyasu(2), N. Matsumoto(2), Naoki Kobayashi(2), M. Kubovič(1), Osamu Mikami(1), Shingo Uehara(1)