Hiroshi Kanbe

Kochi University of Technology — Japan

Physics and Astronomy · Physical Sciences

15h-index658citations49works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(29), Semiconductor Lasers and Optical Devices(19), Advanced Semiconductor Detectors and Materials(14), Photonic and Optical Devices(13), Quantum and electron transport phenomena(8)

Publications49 total

Investigation of Wafer-Bonded InAs/Si Heterojunction by Transmission Electron Microscopy
Japanese Journal of Applied Physics·2012· 2 cited
Pulsed laser excitation power dependence of photoluminescence peak energies in bulk ZnO
Journal of Applied Physics·2011· 5 cited
Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Wafer Bonding
Journal of Electronic Materials·2010· 22 cited
Photoluminescence of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 to 400 K
Journal of Applied Physics·2009· 12 citedOpen Access
Ge/Si Heterojunction Photodiodes Fabricated by Low Temperature Wafer Bonding
Applied Physics Express·2008· 27 cited
Analysis of a wafer bonded Ge∕Si heterojunction by transmission electron microscopy
Applied Physics Letters·2007· 18 citedOpen Access
Ge/Si Heterojunction Photodiodes by Wafer Bonding
2006
Ge/Si Heterojunction Photodiodes Fabricated by Wafer Bonding
Japanese Journal of Applied Physics·2006· 19 cited
Spin-resolved photoluminescence excitation spectra in quantum wires.
応用物理学会学術講演会講演予稿集·1997
Homogeneous linewidth of bound excitons in high-purity GaAs measured by spectral hole burning
Physical review. B, Condensed matter·1996· 9 cited
Excitonic optical properties in semiconductor thin quantum boxes of intermediate regime between zero and two dimensions
Applied Physics Letters·1996· 10 cited
Damage Induced By A Low-Biased 92-MHz Anode-Coupled Reactive Ion Etcher Using Chlorine-Nitrogen Mixed Plasmas
MRS Proceedings·1996· 7 cited
Optical properties in fractional-layer-superlattice quantum wires calculated by multi-band effective mass theory
Journal of Applied Physics·1995· 6 cited
Enhancement of the Excitonic Effects in Semiconductor Thin Quantum Boxes with Large Lateral Size
1995· 1 cited
Quantum Wire Fractional Layer Superlattice Microcavity Lasers
1995
Quantum Wire Microcavity Laser
Optics and Photonics News·1994· 1 cited
GaAs/AlAs Trench-Buried Quantum Wires (<20 nm×20 nm) Fabricated by Metalorganic Chemical Vapor Deposition on Nonplanar Substrates
Japanese Journal of Applied Physics·1993· 1 cited
Band-edge optical absorption spectra of GaAs quantum wires calculated by multiband effective mass theory
Journal of Applied Physics·1993· 43 cited
Fundamental Studies on Hydrogen Production in the Acid-Forming Phase and Its Bacteria in Anaerobic Treatment Processes – The Effects of Solids Retention Time
Water Science & Technology·1993· 61 cited
Polarization properties of a vertical-cavity surface-emitting laser with a fractional-layer-superlattice gain medium
OSA Annual Meeting·1993
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Frequent Co-authors

Hiroaki Ando(13), Nobuhiko Susa(11), Yoshiharu Yamauchi(7), Tatsuya Kimura(7), H. Ando(6), Masafumi Taniwaki(5), Kenji Kajiyama(4), Arturo Chavez-Pirson(4), Masayuki Miyaji(3), Yoshihiko Mizushima(3), Hideki Gotoh(3), Hisao Saito(3), Y. Yamamoto(2), H. Oohashi(2), Tatsuya Itô(2), Mami Hirose(2), Giang T. Dang(2), Tetsuomi Sogawa(2), Masanori Ito(1), T. Kaneda(1)