M. J. Rayson

Materials Science · Physical Sciences

25h-index2.7kcitations116works1.82yr avg
OpenAlex↗Google Scholar↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Diamond and Carbon-based Materials Research(35), Semiconductor materials and devices(30), Electronic and Structural Properties of Oxides(28), High-pressure geophysics and materials(17), Graphene research and applications(16)

Publications116 total

Reevaluating the electrical impact of atomic carbon impurities in MoS2
ArXiv.org·2025· 1 citedOpen Access
Density functional theory study of iron defects in diamond
Diamond and Related Materials·2024· 1 cited
Density functional theory study of Al, Ga and in impurities in diamond
Diamond and Related Materials·2024· 5 citedOpen Access
Density Functional Theory Study of Iron Defects in Diamond
SSRN Electronic Journal·2024Open Access
Structure and electron affinity of the 4H–SiC (0001) surfaces: a methodological approach for polar systems
Journal of Physics Condensed Matter·2021· 10 citedOpen Access
Density functional investigation of boron incorporation in silicon-vacancy complexes
Diamond and Related Materials·2020· 3 cited
A computational study of nanodiamond surface radicals and nitrogen-vacancy charge fluctuations
Journal of Physics and Chemistry of Solids·2020· 7 cited
Doubly charged silicon vacancy center, Si-N complexes, and photochromism in N and Si codoped diamond
Physical review. B./Physical review. B·2020· 21 citedOpen Access
Structure and electron affinity of (1 1<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si33.svg"><mml:mrow><mml:mover accent="true"><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mrow><mml:mo>¯</mml:mo></mml:mrow></mml:mover></mml:mrow></mml:math>0)–X 4H–SiC surface
Applied Surface Science·2020· 2 cited
Hyperfine interaction of H-divacancy in diamond
Results in Physics·2019· 2 citedOpen Access
Density functional theory study on magnetically detecting positively charged nitrogen-vacancy center in diamond
Physical review. B./Physical review. B·2019· 9 cited
First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO<sub>2</sub>/4H–SiC Interface
physica status solidi (a)·2019· 2 citedOpen Access
Theory of Carbon-Vacancy Diffusion at the SiO&lt;sub&gt;2&lt;/sub&gt;/4H-SiC Interface
Materials science forum·2019
Structure and electron affinity of silicon and germanium terminated (0 0 1)-(2  ×  1) diamond surface
Journal of Physics Condensed Matter·2019· 7 cited
Electron-affinity and surface-stability of aluminium-oxide terminated diamond surfaces
Diamond and Related Materials·2019· 17 cited
Investigation of Carbon Interstitials in the Vicinity of the Si0<sub>2</sub>/4H-SiC(0001) Interface
2018
Determining addition pathways and stable isomers for CF <sub>3</sub> functionalization of endohedral Gd@C <sub>60</sub>
Royal Society Open Science·2018· 5 citedOpen Access
Spin density distributions on graphene clusters and ribbons with carbene-like active sites
Physical Chemistry Chemical Physics·2018· 13 cited
Supplementary material from "Determining addition pathways and stable isomers for CF<sub>3</sub> functionalization of endohedral Gd@C<sub>60</sub>"
Figshare·2018Open Access
Ewels_Structures_ESM.tar.gz.png from Determining addition pathways and stable isomers for CF<sub>3</sub> functionalization of endohedral Gd@C<sub>60</sub>.
Figshare·2018Open Access
page 1 of 6Next →

Frequent Co-authors

P. R. Briddon(34), P. R. Briddon(12), Jonathan P. Goss(12), R. Jones(10), M. I. Heggie(8), Alton B. Horsfall(8), Chris Ewels(6), Amit K. Tiwari(6), J. Coutinho(6), J. P. Goss(5), Nicolas G. Wright(5), C. D. Latham(5), Sven Öberg(5), T. Trevethan(4), J. P. Goss(4), Alexandra Carvalho(4), Philipp Wagner(3), V. V. Ivanovskaya(3), C. V. Peaker(3), S. J. Sque(2)