Taizo Hoshino

Nippon Steel (Germany) — Germany

Engineering · Physical Sciences

9h-index277citations22works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(15), Silicon and Solar Cell Technologies(8), Semiconductor materials and devices(5), Semiconductor materials and interfaces(5), Copper Interconnects and Reliability(4)

Publications22 total

Annealing Temperature Dependence of Dislocation Extension and its Effect on Electrical Characteristic of 4H-SiC PIN Diode
Materials science forum·2015· 2 cited
Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers
Materials science forum·2010· 7 cited
Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates
Materials science forum·2010· 4 cited
Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality
Materials science forum·2010
Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
Materials science forum·2010· 3 cited
Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals
Japanese Journal of Applied Physics·2009· 27 cited
Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport
Journal of Crystal Growth·2009· 78 cited
Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
Materials science forum·2008· 16 cited
Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
Materials science forum·2008· 12 cited
Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities
Materials science forum·2008· 25 cited
4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
Materials science forum·2006· 2 cited
4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
Materials science forum·2006Open Access
Behavior of Basal Plane Dislocations in Hexagonal Silicon Carbide Single Crystals Grown by Physical Vapor Transport
Japanese Journal of Applied Physics·2006· 15 cited
Investigation of Dislocation Behavior during Bulk Crystal Growth of SiC
MRS Proceedings·2006· 3 cited
Dislocation processes during SiC bulk crystal growth
Microelectronic Engineering·2005· 23 cited
Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals
Journal of Crystal Growth·2005· 39 cited
Monolithic lead-chalcogenide IR-diode arrays on silicon: fabrication and use in thermal imaging applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1992· 13 cited
Monolithic epitaxial IV-VI compound IR-sensor arrays on Si substrates for the SWIR, MWIR and LWIR range
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1991
<title>Monolithic IR sensor arrays in heteroepitaxial narrow-gap lead chalcogenides on Si for the SWIR, MWIR, and LWIR range</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1990
In-Situ Measurement Of Dew Point And CO Gas Concentration In High Temperature Furnace
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1990
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Frequent Co-authors

Masakazu Katsuno(15), Masashi Nakabayashi(15), Tatsuo Fujimoto(15), Hiroshi Tsuge(15), Hirokatsu Yashiro(15), Takashi Aigo(15), Noboru Ohtani(12), Hosei Hirano(7), M. Sawamura(5), Wataru Ohashi(5), Kohei Tatsumi(4), J. Mašek(3), C. Maissen(3), H. Zogg(3), S. Blunier(3), Tohru Iuchi(2), Jan Vermeiren(1), Cor Claeys(1), Katsunori Iio(1), Kazukiyo Nagata(1)