Tatsuo Fujimoto

Nippon Steel (Germany) — Germany

Engineering · Physical Sciences

15h-index800citations78works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(68), Silicon and Solar Cell Technologies(22), Copper Interconnects and Reliability(22), Advanced ceramic materials synthesis(21), Semiconductor materials and devices(17)

Publications78 total

Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals
Materials science forum·2018· 1 cited
Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
Materials science forum·2018· 1 cited
Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method
Materials science forum·2018
Formation of basal plane stacking faults on the (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" overflow="scroll"><mml:mrow><mml:mn>0</mml:mn><mml:mspace width="0.12em"/><mml:mn>0</mml:mn><mml:mspace width="0.12em"/><mml:mn>0</mml:mn><mml:mspace width="0.12em"/><mml:mover accent="true"><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>¯</mml:mo></mml:mrow></mml:mover></mml:mrow></mml:math>) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth
Journal of Crystal Growth·2017· 11 cited
Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface
Journal of Applied Physics·2017· 14 cited
Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules
Materials science forum·2017· 1 cited
Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen-Doped 4H-SiC Substrate
Materials science forum·2017
SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
Materials science forum·2017· 1 cited
(Invited) Schematic Description of the Internal Stress Distribution Responsible for Defect Generation in Larger-Diameter PVT-Grown 4H-SiC Single Crystals
ECS Meeting Abstracts·2016
(Invited) Schematic Description of the Internal Stress Distribution Responsible for Defect Generation in Larger-Diameter PVT-Grown 4H-SiC Single Crystals
ECS Transactions·2016· 2 cited
Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals
Materials science forum·2016
Characterization of Lattice Plane Bending and Stress Distribution in Physical Vapor Transport-Grown 4H-SiC Crystals
Materials science forum·2016· 1 cited
Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals
Materials science forum·2016· 10 citedOpen Access
Structural Transformation from TSDs to Frank-Type Stacking Faults by Giant Bunched Steps in PVT-Grown 4H-SiC Single Crystals
Materials science forum·2016· 2 cited
Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals
Journal of Applied Physics·2016· 50 cited
The Effects Of Excess Silicon And Carbon In SiC Source Materials On Sic Single Crystal Growth In Physical Vapour Transport Method
Ceramic engineering and science proceedings·2015
Surface morphology and step instability on the (0001)C facet of physical vapor transport-grown 4H–SiC single crystal boules
Journal of Crystal Growth·2015· 25 cited
Thermodynamic Descriptions of Sublimation-recrystallization based Growth Mechanisms for SiC Single Crystals( Recent Advance in Functional Single Crystals)
Journal of the Japanese Association of Crystal Growth·2015
Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals
Materials science forum·2015· 2 cited
Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules
Materials science forum·2015· 2 cited
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Frequent Co-authors

Masakazu Katsuno(46), Noboru Ohtani(36), Hiroshi Tsuge(35), Hirokatsu Yashiro(26), Takashi Aigo(24), Masashi Nakabayashi(18), Shinya Sato(15), Taizo Hoshino(13), Takayuki Yano(13), Wataru Ohashi(10), Hosei Hirano(9), M. Sawamura(5), Kohei Tatsumi(4), Tadaaki Kaneko(4), Komomo Tani(4), Kohei Ohtomo(3), Chikashi Ohshige(3), Hirofumi Matsuhata(3), Makoto Kitabatake(3), Koji Ashida(3)