Peir-Yung Chu

Materials Science · Physical Sciences

13h-index773citations31works0.02yr avg
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Research Topics

Ferroelectric and Piezoelectric Materials(15), Acoustic Wave Resonator Technologies(10), Semiconductor materials and devices(7), Copper Interconnects and Reliability(7), Electronic and Structural Properties of Oxides(6)

Publications31 total

Innovative Transparent LCD Solutions for Smart Retail Applications
Proceedings of the International Display Workshops·2024
Temperature dependence of the electrical performance of SrBi/sub 2/Ta/sub 2/O/sub 9/ for non-volatile memory applications
2002
Effects of film thickness and process parameters on the properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ ferroelectric capacitors for non-volatile memory applications
2002· 1 cited
A new electrode technology for high-density nonvolatile ferroelectric (SrBi/sub 2/Ta/sub 2/O/sub 9/) memories
2002· 8 cited
Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies
2002· 62 cited
Resistance degradation in barium strontium titanate thin films
Journal of Applied Physics·1999· 41 cited
42.2: A New Conductor Structure for Plastic LCD Applications Utilizing “All Dry” Digital Laser Patterning
SID Symposium Digest of Technical Papers·1998· 4 cited
Polarized Raman Studies of Single Crystal SrBi_2Ta_2O_9
APS·1998
Barium Strontium Titanate Capacitors for Embedded Dram
MRS Proceedings·1998· 6 cited
Non-volatile memories using SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> ferroelectrics
Integrated ferroelectrics·1997· 5 cited
Ferroelectric nonvolatile memory technology: applications and integration challenges
IEEE Transactions on Components Packaging and Manufacturing Technology Part A·1997· 14 cited
Electrical characterization of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> thin films for ferroelectric non-volatile memory applications
Integrated ferroelectrics·1996· 4 cited
Electrical properties of SrBi2Ta2O9 thin films and their temperature dependence for ferroelectric nonvolatile memory applications
Applied Physics Letters·1996· 73 cited
Integration Aspects and Electrical Properties of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>for Non-Volatile Memory Applications
MRS Proceedings·1996· 5 cited
Ferroelectric nonvolatile memory technology: applications and integration challenges
1996· 1 cited
Ferroelectric non-volatile memories for low-voltage, low-power applications
Thin Solid Films·1995· 135 cited
Memory applications based on ferroelectric and high-permittivity dielectric thin films
Microelectronic Engineering·1995· 62 cited
Processing and characteristics of spin-cast ferroelectric Bi{sub 4}Ti{sub 3}O{sub 12} thin films
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·1994
Reactive liquid phase sintering of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub>superconducting thin films: Part II. Sintering mechanism and film properties
Journal of materials research/Pratt's guide to venture capital sources·1994· 21 cited
Microwave surface resistance of spin-cast YBa2Cu3O7−<i>x</i> thin films on LaAlO3 substrates
Applied Physics Letters·1993· 2 cited
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Frequent Co-authors

Robert E. Jones(13), P. Zürcher(13), S.J. Gillespie(13), Deborah J. Taylor(10), Y. T. Lii(7), Relva C. Buchanan(7), Sufi Zafar(7), Bo Jiang(5), B. E. White(5), Bo Jiang(3), B. M. Melnick(3), P.D. Maniar(2), J. Z. Witowski(2), P. Alluri(2), M. Kim(2), T. Remmel(2), Isabelle Campion(2), R. C. Buchanan(2), Michael E. Landis(1), Brent A. Aufdembrink(1)