P. Zürcher

Engineering · Physical Sciences

24h-index2.7kcitations86works0.02yr avg
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Research Topics

Semiconductor materials and devices(27), Ferroelectric and Piezoelectric Materials(26), Acoustic Wave Resonator Technologies(23), Magnetic properties of thin films(11), Electron and X-Ray Spectroscopy Techniques(11)

Publications86 total

Berichtigung: Shape Control of Thermodynamically Stable Cobalt Nanorods through Organometallic Chemistry
Angewandte Chemie·2013
Corrigendum: Shape Control of Thermodynamically Stable Cobalt Nanorods through Organometallic Chemistry
Angewandte Chemie International Edition·2013· 1 citedOpen Access
III-V MOSFET Fabrication and Device (Fabrication process of e.g. group III-V MOSFET for nano complementary metal oxide semiconductor application, involves heat treating metal contact structure to produce alloy region within semiconductor substrate)
ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)·2009
Low damage ashing and etching processes for ion implanted resist and Si3N4 removal by ICP and RIE methods
Microelectronic Engineering·2008· 4 cited
GaAs MOSFETs - a viable single supply III-V RF technology solution?
2008
High Mobility III-V MOSFETs For RF and Digital Applications
2007· 58 cited
Are Diamonds a MEMS' Best Friend?
IEEE Microwave Magazine·2007· 88 cited
Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$
IEEE Electron Device Letters·2007· 170 cited
Enhancement mode n-MOSFET with high-κ dielectric on GaAs substrate
2007· 3 cited
Compound semiconductor MOSFETs
Microelectronic Engineering·2007· 13 cited
1-$\mu\hbox{m}$ Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm
IEEE Electron Device Letters·2007· 51 cited
Development of GaAs-based MOSFET using molecular beam epitaxy
Journal of Crystal Growth·2007· 23 cited
High Performance Enhancement Mode III-V MOSFETs for Silicon Co-Integration
ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)·2007
High Performance Enhancement-Mode III-V MOSFETs.
ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)·2007
Are Diamonds a MEMS' Best Friend?
IEEE Microwave Magazine·2007· 13 cited
III-V Enhancement Mode MOSFETs for Digital Applications
ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)·2007
Sub-micron, metal gate, high-к dielectric, implant-free, enhancement-mode III-V mosfets
2007· 7 cited
High Mobility III-V Mosfet Technology
2006· 17 cited
A novel low-temperature method to fabricate MEMS resonators using PMGI as a sacrificial layer
Journal of Micromechanics and Microengineering·2005· 23 cited
RF MEMS resonator for CMOS back-end-of-line integration
2005· 21 cited
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Frequent Co-authors

Robert E. Jones(13), Deborah J. Taylor(9), Philippe Renaud(7), K. Rajagopalan(7), Ravi Droopad(7), M. Passlack(7), J. Abrokwah(6), Peir-Yung Chu(6), S.J. Gillespie(6), Peir Chu(6), Bruno Chaudret(5), Catherine Amiens(5), Y. T. Lii(5), F. Meier(5), Sufi Zafar(5), Bo Jiang(5), Frédéric Dumestre(4), Peter Fejes(4), M. Petras(4), M. Miller(4)