Ravi Droopad

Texas State University — United States

Engineering · Physical Sciences

36h-index4.6kcitations282works3.22yr avg
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Research Topics

Semiconductor materials and devices(156), Electronic and Structural Properties of Oxides(86), Semiconductor Quantum Structures and Devices(72), Advancements in Semiconductor Devices and Circuit Design(65), Ga2O3 and related materials(40)

Publications282 total

Effect of annealing temperature on the structural, chemical, morphological, and optical properties of copper gallate (CuGa2O4) thin films under oxygen environment
Materials Science in Semiconductor Processing·2026
Direct Fabrication of Diamond Films on β-Ga₂O₃ Using Q-carbon
SSRN Electronic Journal·2026Open Access
Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline SrTiO <sub>3</sub> films
WORLD SCIENTIFIC eBooks·2025
Properties of epitaxial BaTiO <sub>3</sub> deposited on GaAs
WORLD SCIENTIFIC eBooks·2025
A comparative high-temperature electrical study of single crystal and amorphous ZnGa2O4 as a gate dielectric in β-Ga2O3 MOSCAP devices
Materials Research Bulletin·2025· 1 cited
Charge carrier trapping and current conduction mechanisms in ZnGa2O4/n-SrTiO3 MOS capacitors
Journal of Materials Science Materials in Electronics·2025· 1 cited
Growth, optimization and high-temperature performance of GeO2/Ga2O3 MOSCAPs
Materials Science in Semiconductor Processing·2025· 4 cited
Effect of annealing temperature on the structural, chemical, morphological and optical properties of copper gallate (CuGa2O4) thin films under oxygen environment
SSRN Electronic Journal·2025Open Access
Direct Fabrication of Diamond Films on Β-Ga₂O₃ Using Q-Carbon
SSRN Electronic Journal·2025Open Access
Direct Fabrication of Diamond Films on Β-Ga₂O₃ Using Q-Carbon
SSRN Electronic Journal·2025Open Access
Evolution of Charge Carrier Trapping and Impelling Current Conduction Mechanism with Temperature in Znga2o4/N-Srtio3 Mos Capacitor
SSRN Electronic Journal·2025Open Access
Impact of Thermal Annealing on Properties of MgGa<sub>2</sub>O<sub>4</sub> Thin Films in Oxygen Ambience
ACS Applied Electronic Materials·2024· 1 cited
Corrigendum to “Electric field emission in GdNiO3 microflower” [Mater. Today Commun. 40 (2024) 109632]
Materials Today Communications·2024Open Access
Epitaxial growth and characterization of copper gallate (CuGa2O4) thin films by pulsed laser deposition
Materials Science in Semiconductor Processing·2024· 6 cited
Upheaval of Negative Dielectric Permittivity and Semiconductor to Metallic Transition in a Thermally Induced Sn-Doped β-Ga<sub>2</sub>O<sub>3</sub> (−201) Single Crystal
ACS Applied Materials & Interfaces·2024· 21 cited
Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO<sub>2</sub> Ferroelectric Films
ACS Applied Materials & Interfaces·2024· 4 citedOpen Access
Electric field emission in GdNiO3 microflower
Materials Today Communications·2024· 1 cited
Enriched electron donor sites and non-overlapping small polaron tunneling electrical conduction in oxygen-deficient β-Ga2O3 thin film on p-Si (100)
Applied Physics A·2024· 6 cited
Heteroepitaxial GaAs thin-films on flexible, large-area, single-crystal-like substrates for wide-ranging optoelectronic applications
Scientific Reports·2024· 2 citedOpen Access
Aerosol assisted-chemical vapour deposition of tetrahedrite copper antimony sulphide thin films: the effect of zinc(II) impurities on optical properties
Thin Solid Films·2024· 4 cited
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Frequent Co-authors

Zhiyi Yu(17), M. Passlack(17), K. Eisenbeiser(10), J. Abrokwah(10), W. J. Ooms(9), C. Overgaard(8), Andrew C. Kummel(8), J. Ramdani(7), K. Rajagopalan(7), J. L. Edwards(7), J. Curless(7), Xiaoming Hu(6), G.N. Maracas(6), Yong Liang(5), D. S. Marshall(4), J. Finder(4), Jian Shen(4), R. Contreras‐Guerrero(4), J. A. Hallmark(4), P. Zürcher(3)