J. Finder

Engineering · Physical Sciences

17h-index1.3kcitations32works0.02yr avg
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Research Topics

Semiconductor materials and devices(21), Ferroelectric and Piezoelectric Materials(20), Electronic and Structural Properties of Oxides(16), Microwave Dielectric Ceramics Synthesis(9), Ferroelectric and Negative Capacitance Devices(5)

Publications32 total

150 mm RF GaN Technology for Commercial RF Applications (Invited)
2021
High Performance 150 mm RF GaN Technology with Low Memory Effects
2020· 7 cited
Dielectric properties of epitaxial Ba0.5Sr0.5TiO3 films on amorphous SiO2 on sapphire
Applied Physics Letters·2005· 21 cited
Advances in heteroepitaxy of oxides on silicon
Thin Solid Films·2004· 69 cited
Crystalline oxide-based devices on silicon substrates
Journal of Electronic Materials·2003· 8 cited
Development of integrated heterostructures on silicon by MBE
International Conference on Molecular Bean Epitaxy·2003· 2 cited
Low-Temperature Fabrication of Epitaxial and Random-Oriented Pb(Zr,Ti)O<sub>3</sub> Capacitors with SrRuO<sub>3</sub> Electrodes on Si Wafers
Integrated ferroelectrics·2003· 5 cited
Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si
Applied Physics Letters·2002· 123 cited
Device characteristics of crystalline epitaxial oxides on silicon
2002
Performance of MOSFETs with ultra thin ZrO/sub 2/ and Zr silicate gate dielectrics
2002· 29 cited
Epitaxial PbZr.52Ti.48O3 films on SrTiO3/(001)Si substrates deposited by sol–gel method
Applied Physics Letters·2002· 30 cited
GaAs MESFETs fabricated on Si substrates using a SrTiO<sub>3</sub> buffer layer
IEEE Electron Device Letters·2002· 86 cited
Epitaxial ferroelectric Pb(Zr, Ti)O3 thin films on Si using SrTiO3 template layers
Applied Physics Letters·2002· 133 cited
Progress in Epitaxial Oxides on Semiconductors
MRS Proceedings·2002· 3 cited
GaAs-Based Heterostructures on Silicon
2002· 9 cited
Study of Microstructure in SrTiO<sub>3</sub>/Si by High-resolution Transmission Electron Microscopy
Journal of materials research/Pratt's guide to venture capital sources·2002· 36 cited
Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy
Materials Science and Engineering B·2001· 39 cited
Epitaxial oxide thin films on Si(001)
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2000· 113 cited
Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy
Applied Surface Science·2000· 36 cited
Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2000· 73 cited
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Frequent Co-authors

K. Eisenbeiser(20), Zhiyi Yu(17), C. Overgaard(14), J. Curless(13), J. Ramdani(11), R. Droopad(10), W. J. Ooms(10), Ravi Droopad(8), J. A. Hallmark(6), V. Kaushik(6), Hua Li(5), D. S. Marshall(5), Karen Moore(5), Kazumi Kato(4), B. Craigo(4), Dirk Jordan(4), R. Ramesh(3), Yong Liang(3), Xiaoming Hu(3), J. L. Edwards(3)