V. Kaushik

Rama University — India

Engineering · Physical Sciences

18h-index1.2kcitations84works13.02yr avg
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Research Topics

Semiconductor materials and devices(60), Advancements in Semiconductor Devices and Circuit Design(37), Integrated Circuits and Semiconductor Failure Analysis(21), Semiconductor materials and interfaces(11), Ferroelectric and Negative Capacitance Devices(11)

Publications84 total

Web-based PoCT for Preliminary Detection of Skin Cancer Using Machine Learning and Deep Learning Models and Their Analysis
2025
Deep Learning-Enhanced Portable Chemiluminescence Biosensor: 3D-Printed, Smartphone-Integrated Platform for Glucose Detection
Bioengineering·2025· 26 citedOpen Access
Effect of Heat Input on MIG Welding of Martensitic Stainless Steel (Grade 420) for Automotive Manufacturing
International Journal of Vehicle Structures and Systems·2023· 1 citedOpen Access
Electric Boat Propulsion System Using Multilevel Converter Based on ANN Controller
International Journal of Recent Technology and Engineering (IJRTE)·2019· 1 citedOpen Access
Statistical demonstration of silicide-like uniform and ultra-low specific contact resistivity using a metal/high-k/Si stack in a sidewall contact test structure
2014· 9 cited
FinFET parasitic resistance reduction by segregating shallow Sb, Ge and As implants at the silicide interface
2012· 9 cited
Impact of thermal budget on dopant-segregated (DS) metal S/D gate-all-around (GAA) PFETs
2012
Performance and variability in multi-V<inf>T</inf> FinFETs using fin doping
2012· 7 cited
300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (X<inf>j</inf>∼5nm) formed with molecular monolayer doping technique
2011· 46 cited
Charge characterization in metal-gate/high-κ layers: Effect of post-deposition annealing and gate electrode
Applied Physics Letters·2007· 4 cited
Addressing Key Concerns for Implementation of Ni FUSI into Manufacturing for 45/32 nm CMOS
2007· 4 cited
Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2007· 53 cited
Work function of Ni3Si2 on HfSixOy and SiO2 and its implication for Ni fully silicided gate applications
Applied Physics Letters·2007· 11 cited
Estimation of fixed charge densities in hafnium-silicate gate dielectrics
IEEE Transactions on Electron Devices·2006· 67 cited
Approach for a Standardized Methodology for Multi-Site Processing of 300mm Wafers at R&D-Sites
2006
Cross-wafer controlled interface layer thickness variation, and its application to SiO<sub>2</sub> / high-κ stack characterisation
2006· 1 cited
Device performance of transistors with high-/spl kappa/ dielectrics using cross-wafer-scaled interface-layer thickness
IEEE Electron Device Letters·2006· 14 cited
Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions
IEEE Transactions on Electron Devices·2006· 32 cited
FLYING WAFER - A STANDARDISED METHODOLOGY FOR MULTI-SITE PROCESSING OF 300 MM WAFERS AT R&amp;D-SITES
IFAC Proceedings Volumes·2006
Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey
Microelectronics Reliability·2005· 5 cited
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Frequent Co-authors

Stefan De Gendt(12), Marc Heyns(12), L. Pantisano(9), Annelies Delabie(8), Sven Van Elshocht(8), E. Röhr(8), Thierry Conard(7), Y. Shimamoto(6), Matty Caymax(6), K. Eisenbeiser(5), T. Schram(5), Abhaya K. Datye(5), Martine Claes(5), Zhiyi Yu(4), J. Ramdani(4), J. Curless(4), C. Overgaard(4), J. Finder(4), Lars‐Åke Ragnarsson(4), R. I. Hegde(4)