M. Passlack

Taiwan Semiconductor Manufacturing Company (Taiwan) — Taiwan

Engineering · Physical Sciences

35h-index4.3kcitations171works1.92yr avg
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Research Topics

Semiconductor materials and devices(141), Advancements in Semiconductor Devices and Circuit Design(87), Ga2O3 and related materials(33), Semiconductor Quantum Structures and Devices(26), Nanowire Synthesis and Applications(25)

Publications171 total

Gate-Dielectric Engineering with an Ultrathin Silicon Oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories
Nano Letters·2026
Gate Dielectric Engineering with an Ultrathin Silicon-oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories
arXiv (Cornell University)·2025Open Access
Multi- <i>V</i> <sub>T</sub> in Oxide--Semiconductor Transistors Leveraging Sub-1-nm Dipoles for Low-Refresh Energy Gain Cell Memory
IEEE Transactions on Electron Devices·2025
Spatio-chemical characterization and elimination of localized growth aberrations on monolayer MoS2 for enhanced performance top gated FETs with scaled ALD oxides
Applied Surface Science·2025Open Access
Orthogonal $\mathbf{V}_{\mathbf{T}}$ Tuning for Oxide Semiconductor 2T Gain Cell Enabled by Interface Dipole Engineering
2025· 3 cited
$1000 \times$ Lower Leakage in High-Performance Carbon Nanotube Nanosheet Fets
2025
Overcoming the Leakage and Contact Resistance Challenges in Highly Scaled PMOS and NMOS Carbon Nanotube Transistors
Nano Letters·2025· 6 citedOpen Access
Si-doped HZO and ZrO2 for hysteresis free high-<i>k</i> dielectric
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2025· 2 cited
ISO-Performance N-Type and P-Type MOSFETs on Densely Aligned CNT Array Enabled by Self-Aligned Extension Doping with Barrier Booster
2024· 3 cited
Statistics Based Modeling and Analysis of Ultra-Low Impedance Carbon Nanotube MOS Capacitors
2024
Characterization and Control of Carbon Nanotube Doping
ECS Meeting Abstracts·2024
High Performance Transistor of Aligned Carbon Nanotubes in a Nanosheet Structure
2024· 6 cited
Device Engineering and Benefit Maximization for Advanced Cryo-CMOS
2024
The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors
Journal of Applied Physics·2024· 6 citedOpen Access
High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at V<sub>DS</sub> of 0.75 V by self-aligned doping in sub-20 nm spacer
2023· 14 cited
Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping
2023· 5 cited
Barrier Booster for Remote Extension Doping and its DTCO for 1D &amp; 2D FETs
2023· 6 cited
High-Endurance MoS<sub>2</sub> FeFET with Operating Voltage Fess Than IV for eNVM in Scaled CMOS Technologies
2023· 5 cited
Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors
Advanced Electronic Materials·2023· 6 citedOpen Access
Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping
Nature Electronics·2023· 35 cited
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Frequent Co-authors

Ravi Droopad(20), M. Hong(10), J. P. Mannáerts(10), G. Doornbos(10), J. Abrokwah(9), K. Rajagopalan(8), Andrew C. Kummel(8), G. Vellianitis(7), C.H. Diaz(7), M.J.H. van Dal(6), R. Oxland(6), E. Fred Schubert(5), B. Duriez(5), N. Moriya(4), G. J. Zydzik(4), R. L. Opila(4), S. Thoms(4), Iain Thayne(4), M. J. Hale(4), P. Fejes(4)